Zobrazeno 1 - 10
of 71
pro vyhledávání: '"G. Vellianitis"'
Autor:
C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz
Publikováno v:
AIP Advances, Vol 4, Iss 4, Pp 047108-047108-9 (2014)
Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spe
Externí odkaz:
https://doaj.org/article/c841c504d9fa439b858a0ea944715b3b
Akademický článek
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Publikováno v:
Journal of Applied Physics. 90:4224-4230
This work focuses on the microstructural characteristics of Y2O3 thin films and interfaces, which is related to their suitability as high-k replacement for SiO2 gate dielectrics in future transistor devices. The films were grown directly on silicon (
Autor:
MALVESTUTO, MARCO, CARBONI, ROBERTA, BOSCHERINI, FEDERICO, M. FANCIULLI, A. DIMOULAS, G. VELLIANITIS, G. MAVROU
Yttria sY2O3d is one of the candidate materials actively studied as a high dielectric constant replacement of amorphous silicon dioxide in downscaled microelectronic devices. An understanding of the physical properties of yttria epilayers on silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::cd13c04a84c287bb81c6e31381f12ff7
http://hdl.handle.net/11585/893
http://hdl.handle.net/11585/893
Autor:
G. Vellianitis, Federico Boscherini, R. Carboni, Francesco d'Acapito, Sabina Spiga, Marco Fanciulli, Marco Malvestuto, Athanasios Dimoulas, G. Mavrou
Publikováno v:
Physical Review B. 71
Yttria (Y{sub 2}O{sub 3}) is one of the candidate materials actively studied as a high dielectric constant replacement of amorphous silicon dioxide in downscaled microelectronic devices. An understanding of the physical properties of yttria epilayers
Publikováno v:
Microelectronics, Microsystems and Nanotechnology.
Autor:
A. Goldenblum, Athanasios Dimoulas, G. Vellianitis, T. Botila, M. Buda, M. Lisca, V. Teodorescu, A. Popa, Ioana Pintilie
Publikováno v:
Journal of Applied Physics. 99:064105
The carrier transport mechanisms in as-grown LaAlO3 and La2Hf2O7 high-k insulator layers deposited on n- and p-Si were deduced from temperature dependent C-V and I-V characteristics correlated with photoelectric measurements. Large, parallel shifts i
Autor:
T. Botila, A. Popa, A. Goldenblum, M. Buda, Ioana Pintilie, G. Vellianitis, Athanasios Dimoulas
Publikováno v:
Applied Physics Letters. 86:203506
Photoelectrical measurements have shown that the current flow through La2Hf2O7 and LaAlO3 high-k insulator layers deposited on silicon takes place via impurity channels. A space charge limited current is evidenced, for different insulator thicknesses
Autor:
Nikos Boukos, A. Dimoulas, G. Vellianitis, G. Mavrou, Michel Houssa, Matty Caymax, Evangelos Evangelou
Publikováno v:
Applied Physics Letters. 86:032908
Thin insulator films of the high-κ dielectric HfO2 are deposited on Ge(100) substrates by evaporating Hf in atomic oxygen beams after in situ thermal desorption of the native oxide in ultrahigh vacuum and subsequent treatment of the clean Ge surface
Autor:
K. Fröhlich, K. Hušeková, Z. Oszi, J.C. Hooker, M. Fanciulli, C. Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom
Publikováno v:
Annalen der Physik; Jan2004, Vol. 13 Issue 1/2, p31-34, 4p