Zobrazeno 1 - 2
of 2
pro vyhledávání: '"G. V. Zorina"'
Publikováno v:
physica status solidi (a). 94:395-402
Structural changes in silicon in depths exceeding the ion ranges at ion bombardment are studied by X-ray diffractometry, microhardness measurement, and selective chemical etching. The data obtained point to the presence of vacancy type defects in the