Zobrazeno 1 - 10
of 10
pro vyhledávání: '"G. V. Zorina"'
Publikováno v:
physica status solidi (a). 94:395-402
Structural changes in silicon in depths exceeding the ion ranges at ion bombardment are studied by X-ray diffractometry, microhardness measurement, and selective chemical etching. The data obtained point to the presence of vacancy type defects in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b27288d121c081895f9c560216fde49
https://doi.org/10.1002/pssa.2210940151
https://doi.org/10.1002/pssa.2210940151
Autor:
Tiunova, Aleksandra V.1,2 (AUTHOR), Kazakova, Anna V.2 (AUTHOR), Korchagin, Denis V.2 (AUTHOR) korden@icp.ac.ru, Shilov, Gennady V.2 (AUTHOR), Aldoshin, Sergey M.2 (AUTHOR), Dmitriev, Aleksei I.2 (AUTHOR), Zhidkov, Mikhail V.2 (AUTHOR), Zakharov, Konstantin V.3 (AUTHOR), Yagubskii, Eduard B.2 (AUTHOR) korden@icp.ac.ru
Publikováno v:
International Journal of Molecular Sciences. Oct2022, Vol. 23 Issue 19, p11449. 12p.
Autor:
Sokolova, T. A.1 (AUTHOR) sokolt65@mail.ru
Publikováno v:
Eurasian Soil Science. May2020, Vol. 53 Issue 5, p580-594. 15p.
Autor:
Zorina, A.1, Kaledina, A.1, Motsepuro, I.1, Anokhina, V.1, Marchenko, S.1, Selivanov, S.1, Zarubaev, V.2, Trifonov, R.1 rost_trifonov@mail.ru
Publikováno v:
Russian Journal of Organic Chemistry. Nov2017, Vol. 53 Issue 11, p1710-1716. 7p. 4 Diagrams, 1 Chart.
Publikováno v:
Russian Journal of Organic Chemistry. Nov2015, Vol. 51 Issue 11, p1627-1632. 6p.
Publikováno v:
Journal of Experimental & Theoretical Physics. Sep2001, Vol. 93 Issue 3, p558. 10p.
Publikováno v:
Semiconductors. Sep2000, Vol. 34 Issue 9, p983. 6p.
Publikováno v:
Semiconductors. Apr99, Vol. 33 Issue 4, p377. 3p.
Autor:
Brikiatis L; Unaffiliated, 17564, Palaeo Faliro, Greece. lb@aegeanman.com.
Publikováno v:
Scientific reports [Sci Rep] 2020 Aug 04; Vol. 10 (1), pp. 13091. Date of Electronic Publication: 2020 Aug 04.