Zobrazeno 1 - 10
of 14
pro vyhledávání: '"G. V. Treyz"'
Publikováno v:
Applied Physics Letters. 59:771-773
Silicon Mach–Zehnder waveguide modulators have been fabricated and operation characterized at the wavelength of 1.3 μm. Device operation is based on the free‐carrier‐induced change in the refractive index of silicon. Modulation depths of −4.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a6da2358b30ef5efedf381daa887b2
https://doi.org/10.1063/1.105338
https://doi.org/10.1063/1.105338
Publikováno v:
IEEE Electron Device Letters. 12:276-278
Silicon optical waveguide modulators, appropriate for operation in the 1.3-1.55 mu m wavelength region, have been fabricated and their performance characterized at the wavelength of 1.3 mu m. The modulator structures consist of p-i-n diodes integrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6d6b79242b14e168cedcf7ba1695a98
https://doi.org/10.1109/55.82059
https://doi.org/10.1109/55.82059
Publikováno v:
Applied Physics Letters. 57:1078-1080
For applications such as optical interconnects1 it is desirable to have the ability to integrate optical modulators, waveguides and silicon electronics. One system of interest is the class of GaAs multiple quantum well (MQW) structures where optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faace870d8730e9538e49e263fc731d2
https://doi.org/10.1063/1.103538
https://doi.org/10.1063/1.103538
Integrated Rib Waveguide-Photodetector Using Si/Si1−xGex Multiple Quantum Wells for Long Wavelenghts
Publikováno v:
MRS Proceedings. 220
We have investigated the structural, electrical, and optical quality of epitaxial Si and Si1−xGex films grown by MBE on SIMOX (Separation by IMplanted OXygen) silicon substrates. Epitaxial films grown on these SOI substrates have been characterized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee1305cec9fe6b4f07f7e78b080b1fc
https://doi.org/10.1557/proc-220-483
https://doi.org/10.1557/proc-220-483
Publikováno v:
Electronics Letters. 28:159
Silicon germanium waveguides with losses of less than 1 dB/cm have been fabricated and characterised at 1-32/nn. Propagation losses are as low as 0-62dB/cm for TM polarised light and 0-50dB/cm for TE polarised light.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40478c758557cb10543773ec653c8b75
https://doi.org/10.1049/el:19920099
https://doi.org/10.1049/el:19920099
Autor:
G. V. Treyz
Publikováno v:
Electronics Letters. 27:118
Mach-Zehnder waveguide interferometers have been fabricated in silicon and operation has been demonstrated at λ = 1.3 μm. The switching mechanism is based on the thermally induced variation of the refractive index of crystalline silicon. Modulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90713d7743aa2971c733f0ee36bb8b8
https://doi.org/10.1049/el:19910079
https://doi.org/10.1049/el:19910079
Publikováno v:
Applied Physics Letters. 50:475-477
Deep trenches have been etched in crystalline silicon with polarization‐controlled, variable curvature walls. Scan speeds of up to 10 mm/s have been demonstrated. A qualitative understanding of the etching process has been developed which is based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0624ffd5f43bebb09a34395af4ea954c
https://doi.org/10.1063/1.98178
https://doi.org/10.1063/1.98178
Publikováno v:
Applied Physics Letters. 54:561-563
Ultraviolet laser photolysis of chlorine (λ=350–360 nm) has been used to produce a microscopic atomic chlorine source. Crystalline silicon has been etched and deep through‐wafer vias have been fabricated. The etching process has been modeled as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eda647363bc2fd479a9b5384268563a
https://doi.org/10.1063/1.100931
https://doi.org/10.1063/1.100931
Publikováno v:
Applied Physics Letters. 55:896-898
A unique method of patterning YBaCuO thin films based on the inhibition of superconductivity by Si‐YBaCuO intermixing has been developed. In the experiment, a thin Si film was first evaporated on a MgO substrate and subsequently patterned using las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48c64d81868f374621010ae6d31a604
https://doi.org/10.1063/1.102448
https://doi.org/10.1063/1.102448
Publikováno v:
Applied Physics Letters. 55:346-348
A deep ultraviolet cw laser has been used to form vias in a polyimide film. The etched features have smooth sidewalls and high aspect ratios. The observations are consistent with an etching mechanism based on thermal decomposition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da025b9f83f67b189f5df242dbc42022
https://doi.org/10.1063/1.101904
https://doi.org/10.1063/1.101904