Zobrazeno 1 - 10
of 108
pro vyhledávání: '"G. V. Luong"'
Autor:
G. V. Luong, S. Strangio, A. T. Tiedemann, P. Bernardy, S. Trellenkamp, P. Palestri, S. Mantl, Q. T. Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1033-1040 (2018)
A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs. Outward-faced n-TFETs are used as access-transistors. Static measure
Externí odkaz:
https://doaj.org/article/a625054c5f9e4591b41c64cc378915ee
Autor:
Chang Liu, Siegfried Mantl, Xi Wang, S. Glass, Keyvan Narimani, Wenjie Yu, A. Fox, A. T. Tiedemann, Qing-Tai Zhao, Qinghua Han, G. V. Luong
Publikováno v:
IEEE Electron Device Letters. 38:818-821
This letter presents an experimental capacitance–voltage ${C}$ – ${V}$ analysis for Si p-tunnel FETs (TFETs) fabricated on ultrathin body at various frequencies and temperatures. The capacitance distribution in TFETs is quite different compared w
Autor:
Siegfried Mantl, Qing-Tai Zhao, Florin Udrea, Cem Alper, Arnab Biswas, Adrian M. Ionescu, M. Foysol Chowdhury, G. V. Luong
Publikováno v:
IEEE Transactions on Electron Devices. 64:1441-1448
This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both ${I}$ – ${V}$ and ${G}$ – ${V}$ characteristics in all regimes of operation, n- and p-amb
Autor:
Adrian M. Ionescu, Anna Krammer, Arnab Biswas, G. V. Luong, Emanuele A. Casu, Qing-T. Zhao, Wolfgang A. Vitale, Cem Alper, Andreas Schüler, Teodor Rosca, Siegfried Mantl
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports
Scientific reports 7(1), 355 (2017). doi:10.1038/s41598-017-00359-6
Scientific Reports
Scientific reports 7(1), 355 (2017). doi:10.1038/s41598-017-00359-6
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently
Autor:
Keyvan Narimani, Chang Liu, A. T. Tiedemann, Wenjie Yu, Qing-Tai Zhao, Qinghua Han, S. Glass, G. V. Luong, A. Fox, Siegfried Mantl, Xi Wang
Publikováno v:
IEEE Transactions on Electron Devices. 63:5036-5040
We present the experimental analysis of planar Si p-tunnel FETs (TFETs) fabricated on ultrathin body Silicon on Insulator (SOI) substrates by an optimized dopant implantation into silicide process. The average subthreshold swing of such planar TFETs
Autor:
S. Mantl, Qing-Tai Zhao, Stefan Trellenkamp, P. Bernardy, G. V. Luong, Keyvan Narimani, A. T. Tiedemann
Publikováno v:
IEEE Electron Device Letters. 37:950-953
In this letter, we present complementary tunneling field-effect transistors (CTFETs) based on strained Si with gate all around nanowire structures on a single chip. The main focus is to suppress the ambipolar behavior of the TFETs with a gate–drain
Autor:
Igor Stolichnov, G. V. Luong, Qing-Tai Zhao, Ali Saeidi, Adrian M. Ionescu, Farzan Jazaeri, Siegfried Mantl
Publikováno v:
Nanotechnology
This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled bet
Autor:
Sebastian Blaeser, Stefan Trellenkamp, Dan Buca, G. V. Luong, S. Mantl, Hans Sigg, A. Schafer, Lars Knoll, Qing-Tai Zhao, Martin J. Süess, Konstantin Bourdelle
Publikováno v:
Solid-State Electronics. 108:19-23
In this work we demonstrate the benefit of high uniaxial tensile strain on the performances of Si nanowire (NW) MOSFETs. High uniaxial tensile strained Si NWs were realized by exploiting a “bridge technology” based on patterning of an initial bia
Autor:
G. V. Luong, Lars Knoll, Siegfried Mantl, S. Richter, A. Schafer, C. Schulte-Braucks, Sebastian Blaeser, Dan Buca, Qing-Tai Zhao, Stefan Trellenkamp
Publikováno v:
ECS Transactions. 66:69-78
Band-to-band tunnel-FETs (TFETs), which can break the 60mV/dec limit for MOSFETs are very attractive for low power applications. It is expected that TFET circuits will outperform subthreshold electronics at voltages around 0.2 V. However, the fabrica
Autor:
Atieh Farokhnejad, Francois Lime, Chang Liu, Fabian Hosenfeld, G. V. Luong, Benjamin Iniguez, Qing-Tai Zhao, Alexander Kloes, Fabian Horst, Michael Graef
Publikováno v:
2017 Austrochip Workshop on Microelectronics (Austrochip).
This paper presents a DC/AC compact model for double-gate (DG) tunnel field-effect transistors (TFET) which is based on a unified analytical modeling framework. The closed-form model shows a good agreement with both, TCAD simulations and measurements