Zobrazeno 1 - 7
of 7
pro vyhledávání: '"G. V. Kolibaba"'
Autor:
V. P. Sirkeli, D. D. Nedeoglo, G. V. Kolibaba, A. N. Avdonin, G. N. Ivanova, T.A. Iurieva, N.D. Nedeoglo
Publikováno v:
Journal of Luminescence. 114:9-14
Long-wave photoluminescence (PL) spectra of both as-grown and Au-doped n-ZnSe single crystals are studied in the temperature range from 81 to 300 K. A narrow band of infrared (IR) radiation centered at 878 nm (1.411 eV) manifests itself in the low-te
Publikováno v:
Journal of Luminescence. 112:62-65
Photoluminescence spectra of ZnSe single crystals doped with Au during a long high-temperature treatment of as-grown crystals in Zn + Au or Se + Au melts are investigated in the temperature range from 83 to 300 K. The Au-doping from Zn + Au melt lead
Autor:
I. M. Tiginyanu, G V Kolibaba, Eduard Monaico, V. V. Ursaki, G. Gärtner, D. D. Nedeoglo, Gert Irmer
Publikováno v:
Journal of Physics D: Applied Physics. 42:045405
Arrays of parallel pores with a diameter of around 60 nm have been introduced by anodic etching in ZnSe single crystals with a free electron concentration of 4 × 1017 cm−3. Porosity-induced Frohlich vibrational modes were studied by Raman scatteri
Publikováno v:
Journal of Physics D: Applied Physics; Feb2009, Vol. 42 Issue 4, p45405-45405, 1p
Autor:
Nitsuk, Yu.1 nitsuk@onu.edu.ua, Vaksman, Yu.1
Publikováno v:
Semiconductors. Jun2017, Vol. 51 Issue 6, p751-754. 4p.
Autor:
Nedeoglo, N. D., Nedeoglo, D. D., Sirkeli, V. P., Tiginyanu, I. M., Laiho, R., Lähderanta, E.
Publikováno v:
Journal of Applied Physics; Dec2008, Vol. 104 Issue 12, p123717, 5p, 9 Graphs
Autor:
Makhlouf, Abdel Salam Hamdy
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