Zobrazeno 1 - 6
of 6
pro vyhledávání: '"G. V. Itkinson"'
Autor:
A. S. Pavlyuchenko, O. V. Osipov, I. P. Smirnova, G. V. Itkinson, M. V. Kukushkin, L. K. Markov
Publikováno v:
Semiconductors. 53:1529-1534
A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::552c2e0186aca8f48c463cb975d38927
https://doi.org/10.1134/s1063782619110125
https://doi.org/10.1134/s1063782619110125
Autor:
L. K. Markov, D. A. Bauman, D. A. Zakheim, A. S. Pavluchenko, M. V. Kukushkin, O. V. Osipov, G. V. Itkinson, I. P. Smirnova
Publikováno v:
physica status solidi c. 12:381-384
In this paper, we report on the development and fabrication of high power LED chips based on AlGaInN. These chips are meant for flip-chip mounting and have novel contact pad topology utilizing two-level metallization with the intermediate dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84587991ed0ef157ee67d5c1ee53e2e3
https://doi.org/10.1002/pssc.201400174
https://doi.org/10.1002/pssc.201400174
Autor:
Anton E. Chernyakov, I. P. Smirnova, L. K. Markov, M. V. Kukushkin, A. S. Pavlyuchenko, D. A. Bauman, D. A. Zakheim, G. V. Itkinson, O. V. Osipov
Publikováno v:
Semiconductors. 48:1254-1259
A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4b794a0efdeaa85706512fadd7b5a8
https://doi.org/10.1134/s1063782614090267
https://doi.org/10.1134/s1063782614090267
Autor:
E. M. Arakcheeva, M. M. Kulagina, G. A. Onushkin, G. V. Itkinson, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, E. D. Vasil’eva, A. L. Zakheim, D. A. Zakheim
Publikováno v:
Semiconductors. 39:851-855
The design and fabrication of a high-power light-emitting diode chip that has an active-region area of 1 mm2 and emits at a wavelength of 460 nm are described. The chip structure is developed on the basis of numerical simulation and is intended for f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a0b73351e100a2adac0b15241a09b6a
https://doi.org/10.1134/1.1992647
https://doi.org/10.1134/1.1992647
Autor:
A. V. Fomin, I. V. Rozhansky, S. A. Gurevich, A. L. Zakheim, D. A. Zakheim, G. V. Itkinson, E. M. Arakcheeva, V. W. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, E. D. Vasil’eva, M. M. Kulagina, I. P. Smirnova
Publikováno v:
physica status solidi (c). 1:2401-2404
In this work we report on the fabrication and characterization of high-power blue and white LEDs based on AlGaInN heterostructures. The completely new LED chip design utilizing two-level setting of n-type contact pads with intermediate isolation has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df032a15f69f74545b26d1432060fa75
https://doi.org/10.1002/pssc.200404993
https://doi.org/10.1002/pssc.200404993
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
A comparative study has been carried out of the composition and the reflection and luminescence spectra of yttrium aluminum garnet and sialons as promising photophosphors. It is shown that the phase composition and surface inhomogeneity of the sialon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b3c111713abac353d114d7bc29c59b2
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292812300013&KeyUID=WOS:000292812300013
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292812300013&KeyUID=WOS:000292812300013
