Zobrazeno 1 - 2
of 2
pro vyhledávání: '"G. V. Flusov"'
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
It was found that by doping of Pb1−xSnxTe (0.16 ≲ x ≲ 0.22) crystals with Cd or In the photoluminescence,(PL) intensity is increased ∼ 5 and ∼ 20 times, respectively. The radiative transitions to deep impurity levels, the substantial (up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e4655dcfbb7053f54b79987615c8f75
https://doi.org/10.1007/3-540-11191-3_79
https://doi.org/10.1007/3-540-11191-3_79
Publikováno v:
Soviet Journal of Quantum Electronics. 19:441-442
Whisker PbTe crystals 70–120 μm in diameter were used as injection lasers with two p-n junction geometries: transverse and coaxial. Lasing was observed in the pulsed regime at T = 4.2 K (λ = 6.5 μm). The mode structure of the emission spectra wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedef865bb57a9d686d04c3268c91bbf
https://doi.org/10.1070/qe1989v019n04abeh007884
https://doi.org/10.1070/qe1989v019n04abeh007884
