Zobrazeno 1 - 10
of 29
pro vyhledávání: '"G. Utlu"'
Publikováno v:
Thin Solid Films. 680:48-54
Photoconduction mechanism of ZnO thin films that produced by Pulsed Electron Deposition method is systematically investigated by taking Transient Photocurrent Spectroscopy measurements for different atmospheres including high vacuum and air environme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f414d8a6ef295ff64b06d27fc01c0c77
https://doi.org/10.1016/j.tsf.2019.04.030
https://doi.org/10.1016/j.tsf.2019.04.030
Semiconducting Zinc Oxide (ZnO) is ideal candidate for ultraviolet (UV) photodetector due to its promising optoelectronic properties. Photoconductive type ZnO photodetectors, which is fabricated in metal-semiconductor-metal configuration, show mostly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a784de3e7be0bfa19a2ba38e7cab735
http://arxiv.org/abs/1906.10731
http://arxiv.org/abs/1906.10731
WOS: 000495445400008
In this study, the effects of annealing temperature and thickness on zinc oxide formation in ZnO/glass thin film systems were investigated. For this purpose, ZnO thin films with thicknesses of 150-300 nm were obtained by the
In this study, the effects of annealing temperature and thickness on zinc oxide formation in ZnO/glass thin film systems were investigated. For this purpose, ZnO thin films with thicknesses of 150-300 nm were obtained by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::213ffff5335fb427fea4e440833a11fd
https://hdl.handle.net/11454/63424
https://hdl.handle.net/11454/63424
WOS: 000500939400013
ZnO nanostructures were grown on porous silicon (PSi) substrate at different solution temperatures (85-100 degrees C) by using electrodeposition method. Then PSi/ZnO samples were systematically characterized. XRD analysis in
ZnO nanostructures were grown on porous silicon (PSi) substrate at different solution temperatures (85-100 degrees C) by using electrodeposition method. Then PSi/ZnO samples were systematically characterized. XRD analysis in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feea25f41ebcfbd1538df9e1230b6eed
https://hdl.handle.net/11454/63088
https://hdl.handle.net/11454/63088
Publikováno v:
Applied Surface Science. 310:248-256
The temperature-dependent resistivity measurements of Ag/Ni-Si silicide films with 28–260 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5734d6a5f0aa4b526c62d65ce73bfeb
https://doi.org/10.1016/j.apsusc.2014.02.145
https://doi.org/10.1016/j.apsusc.2014.02.145
Akademický článek
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Akademický článek
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Publikováno v:
Microelectronic Engineering. 113:86-92
The total electrical resistivity measurements of the Ni-Si silicide films, with thicknesses of 37-400nm have been carried out as a function of temperature and film thickness in a wide temperature range of 100-900K. The temperature-dependence of the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0b1cada2fe7d57197205c57ad53653
https://doi.org/10.1016/j.mee.2013.07.019
https://doi.org/10.1016/j.mee.2013.07.019
Publikováno v:
Materials Chemistry and Physics. 132:421-430
The temperature-dependent resistivity measurements of Ni–Si silicide films with 18–290 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772683ac20d0fc5e8bf8e2daf851f349
https://doi.org/10.1016/j.matchemphys.2011.11.048
https://doi.org/10.1016/j.matchemphys.2011.11.048
Autor:
G. Utlu
Publikováno v:
International Journal of Modern Physics B. 25:3773-3783
The temperature-dependent resistivity measurements of our Ag – Ni – Si silicide films with 51–343 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45f70fdec49997d7b000b7d037a4cc30
https://doi.org/10.1142/s0217979211101892
https://doi.org/10.1142/s0217979211101892