Zobrazeno 1 - 10
of 49
pro vyhledávání: '"G. U. Pignatel"'
Autor:
G.-F.D. Betta, V. Speziali, Valerio Re, Lodovico Ratti, G. U. Pignatel, Maurizio Boscardin, L. Bosisio, Mario Giorgi, Nicola Zorzi, G. Batignani, P. Gregori
Publikováno v:
ResearcherID
Fondazione Bruno Kessler-IRIS
Fondazione Bruno Kessler-IRIS
We report on an research and development activity aimed at the fabrication of silicon microstrip detectors with integrated front-end electronics to be used in high-energy physics and space experiments and medical/industrial imaging applications. A sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f06fb321a57db4f53dd66fadbfacb415
https://doi.org/10.1109/tns.2002.1039608
https://doi.org/10.1109/tns.2002.1039608
Autor:
G. U. Pignatel, Francesco Svelto, Nicola Zorzi, F. Sandrelli, M. Carpinelli, Valerio Re, G. Batignani, Massimo Manghisoni, S. Bettarini, S. Dittongo, Matteo Rama, F. Forti, A. Lusiani, V. Speziali, L. Bosisio, Lodovico Ratti, Maurizio Boscardin, Mario Giorgi, G.-F. Dalla Betta, P. Gregori
Publikováno v:
Fondazione Bruno Kessler-IRIS
We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e05134d503b5123608bdbe920c97101
https://doi.org/10.1016/s0168-9002(01)01777-6
https://doi.org/10.1016/s0168-9002(01)01777-6
Publikováno v:
IEEE Transactions on Nuclear Science. 48:972-976
A compact, analytical model is derived for the n-side interstrip resistance of double-sided silicon microstrip detectors, allowing for fast and accurate prediction of the minimum p-stop (or p-spray) implant dose ensuring adequate interstrip isolation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85863e0a96cac1036783fea0a4e26c24
https://doi.org/10.1109/23.958707
https://doi.org/10.1109/23.958707
Autor:
Benno Margesin, S. Brida, V. Guarnieri, G. U. Pignatel, Flavio Giacomozzi, A. Faes, Makarand Paranjape, M. Zen
Publikováno v:
Microelectronic Engineering. 53:547-551
Tetra-methyl ammonium hydroxide, or TMAH, is an anisotropic silicon etchant that is gaining more and more attention in the fabrication process of mechanical microstructures and device isolation, as an alternative to the more usual KOH and EDP etchant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a38d0e49c5fecb9816aee15e8563649
https://doi.org/10.1016/s0167-9317(00)00375-0
https://doi.org/10.1016/s0167-9317(00)00375-0
Autor:
L. Zanotti, C. Brofferio, B. Margesin, A. Alessandrello, Jeffrey W. Beeman, A. Giuliani, Oliviero Cremonesi, A. Nucciotti, G. Pessina, G. U. Pignatel, E. E. Haller, Ettore Fiorini, Mario Zen, A. Monfardini, M. Pavan, Ezio Previtali
Publikováno v:
Scopus-Elsevier
The low-Q 187Re forbidden beta transition is studied by means of a microbolometers array in order to get a direct limit on the νe mass. The achievable limit of the on-the-shelf small array (ten detectors) in one year measure acquisition time is less
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bd4d697d584e72f880041d6d177e8df
https://doi.org/10.1016/s0920-5632(00)00518-1
https://doi.org/10.1016/s0920-5632(00)00518-1
Autor:
A. Nucciotti, L Ferrario, Benno Margesin, G. U. Pignatel, E. Previtali, C. Cattadori, R Cavallini, A. Giuliani, A. Alessandrello, Monica Sisti, Oliviero Cremonesi, M. Pavan, C. Brofferio, G. Pessina
Publikováno v:
Journal of Physics D: Applied Physics. 32:3099-3110
We have fabricated and characterized Si-implanted thermistors to be used as phonon sensors in very-low-temperature, single-quantum detectors. After a short review of the required thermistor properties for this type of application, a detailed descript
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c0c41d6d49de2ce3b8a81ab979a44c5
https://doi.org/10.1088/0022-3727/32/24/302
https://doi.org/10.1088/0022-3727/32/24/302
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1253-1257
A theoretical study is presented showing that the reverse leakage current thermally generated at the cutting edge of type-inverted p/sup +/-n single-sided silicon microstrip detectors is limited. Such behaviour is shown to be related to a self-limiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bbb16e87e152da7c7a7f5f68cd500c5
https://doi.org/10.1109/23.785741
https://doi.org/10.1109/23.785741
Autor:
E. E. Haller, B. Margesin, G. U. Pignatel, Oliviero Cremonesi, A. Alessandrello, M. Pavan, A. Giuliani, G. Pessina, A. Monfardini, Ettore Fiorini, Ezio Previtali, L. Zanotti, C. Brofferio, A. Nucciotti, Mario Zen, Jeffrey W. Beeman
Publikováno v:
Physics Letters B. 457:253-260
Crystals of silver perrhenate were used for the first time in the bolometric measurement of the spectrum of 187 Re with the aim of determining the electron antineutrino mass. The temperature rise was measured by means of neutron transmutation doped g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc981e4f0f0c2d0a5f9fc553ecdc2370
https://doi.org/10.1016/s0370-2693(99)00519-5
https://doi.org/10.1016/s0370-2693(99)00519-5
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Autor:
G.-F. Dalla Betta, Giovanni Soncini, G. U. Pignatel, Maurizio Boscardin, L. Bosisio, Giovanni Verzellesi
Publikováno v:
IEEE Transactions on Electron Devices. 46:817-820
We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14eae53288a3ba0de194942abec9ac50
https://doi.org/10.1109/16.753724
https://doi.org/10.1109/16.753724
Publikováno v:
Fondazione Bruno Kessler-IRIS
PIN diodes and other test structures have been fabricated on both n- and p-type, high-resistivity, Floating-Zone (FZ) silicon substrates. Different alternative extrinsic-gettering techniques have been adopted to the purpose of meeting the required sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b6830c1562b1ce8b2aaad8c2f6c5528
https://doi.org/10.1016/s0168-9002(97)00612-8
https://doi.org/10.1016/s0168-9002(97)00612-8