Zobrazeno 1 - 10
of 222
pro vyhledávání: '"G. Turban"'
Publikováno v:
Médecine et Armées Vol. 45 No.2 ISBN: 9782813005007
Le maintien de l’autonomie stratégique de la France implique pour le Service de santé des armées de pouvoir déployer une chaîne médicale complète afin d’assurer le soutien des forces armées. Le Service de santé des armées a ainsi dével
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d9e25c9a66b68992c44a2998c2a58b
https://doi.org/10.17184/eac.7437
https://doi.org/10.17184/eac.7437
Publikováno v:
Médecine et Armées Vol. 45 No.2 ISBN: 9782813005007
Le médecin du personnel navigant doit proposer un suivi de proximité bâti sur une relation de confiance avec les navigants. Sa formation initiale lui permet de connaître les contraintes existantes dans le domaine aéronautique, cependant c’est
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8246d259e905da78574efabae0583c9b
https://doi.org/10.17184/eac.7431
https://doi.org/10.17184/eac.7431
Publikováno v:
Chemical Physics Letters. 397:516-519
Trying to understand the growth mechanism of the carbon nanotubes (CNTs), a very simple growth approach was undertaken. Nanotubular structures were grown from diamond-like carbon (DLC) films. Vacuum annealing of DLC (C-sp 3 rich) films mixed with cat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa77524ccfdd14de80f51eedaa41c528
https://doi.org/10.1016/j.cplett.2004.09.020
https://doi.org/10.1016/j.cplett.2004.09.020
Autor:
M. C. Peignon, Ioannis Raptis, Ch. Cardinaud, Evangelos Valamontes, Angeliki Tserepi, George Cordoyiannis, David Eon, G. Turban, L. de Poucques, Evangelos Gogolides
Publikováno v:
Microelectronic Engineering. :901-906
Surface modification of polydimethylsiloxane (PDMS) under O 2 plasma exposure is studied by XPS and real time ellipsometry. Results show the conversion of the PDMS surface into a SiO x -like material. Total layer thickness and extension of the SiO x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152094b95122a97b32c95b5e999a497a
https://doi.org/10.1016/s0167-9317(02)00482-3
https://doi.org/10.1016/s0167-9317(02)00482-3
Autor:
G. Turban, A. Rhallabi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:743-749
Three-dimensional kinetic Monte Carlo calculations have been carried out to study the film growth of SiO2 by a TEOS–O2 plasma mixture. The kinetic surface mechanisms take into account the nucleation phase process, the physisorption of reactive TEOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4e9c422c24d090ea0db482c7e564ee
https://doi.org/10.1116/1.1362676
https://doi.org/10.1116/1.1362676
Publikováno v:
Journal of Non-Crystalline Solids. 283:47-55
Diamond-like carbon films have been prepared by plasma enhanced chemical vapour deposition of methane at low pressure, in a dual ECR-RF glow discharge, at two different bias voltages −30 and −600 V and with different thicknesses (0.2, 0.5 and 0.8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a640ef91ace24033e03300c2233bbc
https://doi.org/10.1016/s0022-3093(01)00482-3
https://doi.org/10.1016/s0022-3093(01)00482-3
Publikováno v:
Scopus-Elsevier
A surface model is presented for the etching of silicon (Si) and silicon dioxide (SiO2) in fluorocarbon plasmas. Etching and deposition are accounted for using a generalized concept for the “polymer surface coverage,” which is found to be equival
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2926e1c08628ba3bbcfb9ae95d50ceb2
https://doi.org/10.1063/1.1311808
https://doi.org/10.1063/1.1311808
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1366-1372
A two-dimensional simulation of reactive ion etching (RIE) of InP trench profiles is developed. The local equation of etching rate on each string is established considering the Langmuir adsorption concept. The etching rate takes into account the chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f66a6e626cac06100f3ac0f9fde5490
https://doi.org/10.1116/1.582355
https://doi.org/10.1116/1.582355
Publikováno v:
Microelectronic Engineering. 53:375-379
A new high density plasma SiO"2 etching process based on CHF"3/CH"4 mixture is investigated by means of plasma diagnostics and surface analysis. Selectivity as high as 15 with respect to silicon has been obtained. Besides, a slight decrease of the Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f266a8d766b1c57bdb9c22b23af61ba
https://doi.org/10.1016/s0167-9317(00)00337-3
https://doi.org/10.1016/s0167-9317(00)00337-3
Autor:
F. Gaboriau, G. Grützner, A. Barreau, G. Turban, G. Bleidieβel, K. Pfeiffer, Ch. Cardinaud, M. C. Peignon
Publikováno v:
Microelectronic Engineering. 53:501-505
In this work, we studied etching of resists suitable for nano-imprint lithography. First, various resists have been tested in a SiO"2 process under low pressure and high plasma density conditions in order to get the best SiO"2/resist selectivity. Sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba66d5f391f9eb134f93f58f27d58834
https://doi.org/10.1016/s0167-9317(00)00365-8
https://doi.org/10.1016/s0167-9317(00)00365-8