A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions

Autor: Teresa Monteiro, Katharina Lorenz, Marco Peres, Bianchi Méndez, Bruno Daudin, Joana Rodrigues, Eduardo Alves, S.M.C. Miranda, Emilio Nogales, Luís Alves, G. Tourbot

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 306:201-206

GaN nanowires (NWs) implanted with Europium, Praseodymium and Erbium ions were analysed by Pho- toluminescence (PL), Cathodoluminescence (CL) and Ionoluminescence (IL). The red 5 D0 ? 7 F2 and 3 P0 ? 3 F2 luminescence of the Eu transitions were ident

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b942ddbfd5c4ed7becd6938e01e42a22
https://doi.org/10.1016/j.nimb.2012.12.028

Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures

Autor: Cédric Leclere, D. Camacho, Bruno Gayral, Ana Cros, Karine Hestroffer, G. Tourbot, Hubert Renevier, Bruno Daudin, Catherine Bougerol, Yann-Michel Niquet, Diane Sam-Giao, Rafael Mata

Publikováno v: Physics Procedia. 28:5-16

After discussing the GaN NW nucleation issue, we will present the structural properties of axial and radial (i.e. core/shell) GaN/AlN NW heterostructures and adress the issue of critical thickness during the growth of such heterostructures. Next, we

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aff91de9cd4996387270bcd0299460a

GaN-based nanowires: From nanometric-scale characterization to light emitting diodes

Autor: Bruno Daudin, J. Garcia, Guy Feuillet, G. Tourbot, Philippe Gilet, A.-L. Bavencove, E. Pougeoise, B. Gayral, Le Si Dang, F. Levy, B. André

Publikováno v: physica status solidi (a). 207:1425-1427

We studied and improved gallium nitride (GaN) nanowire (NW) based light emitting diodes (LEDs). PIN nanodiodes with and without InGaN/GaN multiple quantum wells (MQWs) were grown by molecular beam epitaxy (MBE) under N-rich conditions on n-doped Si(1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b98cc9fc6a2881c217f7242977b82c26
https://doi.org/10.1002/pssa.200983603

Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

Autor: Emilio Nogales, Tito Trindade, Auguste Fernandes, Teresa Monteiro, Eduardo Alves, Bianchi Méndez, T. Auzelle, G. Tourbot, Luís Alves, Florinda M. Costa, Bruno Daudin, Joana Rodrigues, Katharina Lorenz, S.M.C. Miranda

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

Gallium nitride (GaN) has gained a lot of attention due to its high range of applications as solid state light emitters and detectors. However, the nitride samples often evidence deep level optically active defects affecting their performance on the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5959cc9771989da28bc58a4fe9c817b

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

Autor: Andrea Balocchi, Julien Renard, Xavier Marie, G. Tourbot, Cong Tu Nguyen, Bruno Gayral, H. Mariette, Thierry Amand, Bruno Daudin

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (23), pp.235310. ⟨10.1103/PhysRevB.84.235310⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 84 (23), pp.235310. ⟨10.1103/PhysRevB.84.235310⟩

We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin rel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b3d59edb63f90a608a04e6fe35abd72
http://arxiv.org/abs/1107.5644