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pro vyhledávání: '"G. Timp"'
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Akademický článek
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Publikováno v:
Nucleic Acids Research
We have explored the electromechanical properties of DNA by using an electric field to force single hairpin molecules to translocate through a synthetic pore in a silicon nitride membrane. We observe a threshold voltage for translocation of the hairp
Publikováno v:
Applied Surface Science. :291-296
We have previously demonstrated that an optical standing wave can be used to focus a neutral atomic beam into a structure which is deposited on a substrate, under conditions that are compatible with molecular beam epitaxy. We have made structures in
Publikováno v:
Applied Physics Letters. 74:1260-1262
Thin SiO2 layers were exposed to an HBr/O2 plasma for a variety of short periods, reproducing the over-etching process after polycrystalline Si gate electrodes have been etched and the gate oxide layer is exposed. Samples were transferred under vacuu
Publikováno v:
Applied Physics Letters. 74:272-274
Determining the cross-sectional doping profile of very small metal–oxide–semiconductor field effect transistors and specifically the direct measurement of their channel length is necessary for true channel engineering to be possible. Scanning cap
Autor:
Qian Zhao, Kaethe Timp, Chun Li, Winston Timp, Paul Matsudaira, Utkur Mirsaidov, G. Timp, R. Timp, Gleb M. Akselrod
Publikováno v:
Biophysical journal. 91(9)
We have assembled three-dimensional heterotypic networks of living cells in hydrogel without loss of viability using arrays of time-multiplexed, holographic optical traps. The hierarchical control of the cell positions is achieved with, to our knowle
Publikováno v:
High Dielectric Constant Materials ISBN: 9783540210818
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d206d3d41750e361602355ee1f5966
https://doi.org/10.1007/3-540-26462-0_21
https://doi.org/10.1007/3-540-26462-0_21
Autor:
G. Timp, K.K. Bourdelle, J.E. Bower, F.H. Baumann, T. Boone, R. Cirelli, K. Evans-Lutterodt, J. Garno, A. Ghetti, H. Gossmann, M. Green, D. Jacobson, Y. Kim, R. Kleiman, F. Klemens, A. Kornlit, C. Lochstampfor, W. Mansfield, S. Moccio, D.A. Muller, I.E. Ocola, M.I. O'Malley, J. Rosamilia, J. Sapjeta, P. Silverman, T. Sorsch, D.M. Tennant, W. Timp, B.E. Weir
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
One of the primary means for improving performance and increasing the scale of integration on a chip is the miniaturization of the electronic devices that comprise it. The SIA roadmap projects that future gains in performance will continue to accrue
Autor:
G. Timp, A. Agarwal, K.K. Bourdella, J. Bower, T. Boone, A. Ghetti, M. Green, J. Gamo, H. Gossmann, D. Jacobson, R. Kleiman, A. Kornblit, F. Klemens, S. Moccio, M.L. O'Malley, L. Ocola, J. Rossm-nalia, J. Sapjeta, P. Silverman, T. Sorsch, W. Timp, D. Tennani
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
Reports measurements of the DC characteristics of sub-100nm pMOSFETs that employ low leakage, ultra-thin gate oxides only 1-2nm thick and ultra-shallow junctions to achieve high current drive capability and transconductance. We demonstrate that I/sub