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pro vyhledávání: '"G. Tabares"'
Akademický článek
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Autor:
Yoshiaki Nieda, Elías Muñoz, A. Kurtz, Manuel Recuero López, Adrian Hierro, Atsushi Nakamura, JM José Maria Ulloa, Mari Suzuki, Jiro Temmyo, G. Tabares
Publikováno v:
Journal of Crystal Growth. 449:27-34
We investigated the optical bandgap engineering of ZnO based quaternary alloy films of wurtzite Zn 1− y (Mg x Cd 1− x ) y O for photodiodes in visible spectral range. Quaternary alloy films were successfully synthesized by remote-plasma enhanced
Autor:
Benjamin Damilano, Marie Lesecq, Sébastien Chenot, Sarra Mhedhbi, Julien Brault, Yvon Cordier, Virginie Hoel, Nicolas Defrance, G. Tabares, A. Ebongue, P. Altuntas
Publikováno v:
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current dens
Autor:
Andrés Redondo-Cubero, A. de Andrés, Encarnación Lorenzo, G. Tabares, Sandra Cortijo-Campos, Emilia Molinero Ruiz, Jose Luis Pau, M. Revenga, Luis Vázquez
Publikováno v:
Sensors and Actuators A: Physical. 304:111884
Graphene Oxide (GO) is considered an ideal candidate for the fabrication of hydrogen gas (H2 (g)) sensors due to its excellent capabilities for direct wiring, thanks to the presence of functional groups, which provide an opportunity to modify its che
Autor:
Nicolas Defrance, Benjamin Damilano, P. Altuntas, Yvon Cordier, G. Tabares-Jimenez, A. Ebongue, Virginie Hoel, Etienne Okada, Marie Lesecq, Sarra Mhedhbi
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at $\text{V}_{\mathrm {GS}} = 0$ V and a peak extrinsic
Publikováno v:
Thin Solid Films. 548:539-545
We report the selection of materials and orientations on characteristics of MgZnO:N based Schottky junctions. The Schottky contacts were fabricated to both polar and nonpolar films with Pt and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (
Publikováno v:
Journal of Mass Spectrometry and Advances in the Clinical Lab, Vol 25, Iss , Pp 61-70 (2022)
Introduction: Haptoglobin (Hp) is an abundant acute-phase protein secreted mainly by the liver into the bloodstream. There are three Hp protein phenotypes (Hp type 1–1, 2–1, and 2–2), which differ in the number of α- and β-chains, type of α-
Externí odkaz:
https://doaj.org/article/054a9826e2e1461da16ae90a9cbe5416
Akademický článek
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Autor:
Adrian Hierro, E. Muñoz, Borge Vinter, A. Kurtz, G. Tabares, Jean-Michel Chauveau, Manuel Lopez-Ponce
Publikováno v:
Oxide-based Materials and Devices VI.
We review in this paper the application of ZnO/(Zn,Mg)O quantum wells to the photodetection of the polarization state of UV light. This photodetection is achieved by using the natural anisotropy that exists in non-polar ZnO/(Zn,Mg)O quantum wells, wh
Autor:
Vicente Muñoz-Sanjosé, S Albert, Said Agouram, A. Kurtz, V. Marín-Borrás, Manuel Lopez-Ponce, JM José Maria Ulloa, Adrian Hierro, E. Muñoz, G. Tabares
Publikováno v:
Semiconductor Science and Technology, ISSN 0268-1242, 2015-09, Vol. 30, No. 10
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
This work presents a comprehensive optical characterization of Zn1−xMgxO thin films grown by spray pyrolysis (SP). Absorption measurements show the high potential of this technique to tune the bandgap from 3.30 to 4.11 eV by changing the Mg acetate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86382c9f7a2a7200eebebeaa964a5fd3
https://oa.upm.es/40784/
https://oa.upm.es/40784/