Zobrazeno 1 - 10
of 66
pro vyhledávání: '"G. T. Thaler"'
Annealing and Measurement Temperature Dependence of W2B- and W2B5-Based Rectifying Contacts to p-GaN
Publikováno v:
Journal of Electronic Materials. 36:384-390
Schottky contact formation on p-GaN using W2B/Pt/Au and W2B5/Pt/Au metallization schemes was investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V), and Auger electron spectroscopy measurements. The Schottky barrier height (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65e1cc69b44e3fbdfe8e185ea5187eeb
https://doi.org/10.1007/s11664-006-0054-8
https://doi.org/10.1007/s11664-006-0054-8
Autor:
Uwe Hommerich, R. M. Frazier, C. R. Abernathy, Jennifer K. Hite, G. T. Thaler, E. Brown, J. M. Zavada, Ryan Davies, Stephen J. Pearton
Publikováno v:
Journal of Electronic Materials. 36:391-396
Single-phase GaGdN and GaGdN:Si films were grown on sapphire substrates by gas source molecular beam epitaxy using solid Gd, Ga, and Si sources and active nitrogen derived from a RF nitrogen plasma source. The undoped films were highly resistive film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b0aeb0e688b1b330d32d1ad08734615
https://doi.org/10.1007/s11664-006-0040-1
https://doi.org/10.1007/s11664-006-0040-1
Autor:
Cammy R. Abernathy, G. T. Thaler, S. J. Pearton, Ryan Davies, John Zavada, Jennifer K. Hite, R. M. Frazier
Publikováno v:
ECS Transactions. 3:409-414
Single phase GaGdN and GaGdN:Si thin films were grown by gas source molecular beam epitaxy using solid Gd, Ga, and Si sources along with a RF nitrogen plasma. SQUID magnetometry indicated room temperature ferromagnetism in both materials. Defects pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d132db7d743b43fbc75733bcaddacc
https://doi.org/10.1149/1.2357231
https://doi.org/10.1149/1.2357231
Autor:
Soohwan Jang, Stephen J. Pearton, Fan Ren, C. R. Abernathy, A. H. Onstine, D. Stodilka, Timothy J. Anderson, Brent P. Gila, Andrew M. Herrero, M. Hlad, K. K. Allums, G. T. Thaler, A. Gerger, B. S. Kang
Publikováno v:
Solid-State Electronics. 50:1016-1023
In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa8dbc0bb80ae51be2be9911bafbbe1
https://doi.org/10.1016/j.sse.2006.04.001
https://doi.org/10.1016/j.sse.2006.04.001
Autor:
Yuanjie Li, Sang Youn Han, Soowhan Jang, David P. Norton, Stephen J. Pearton, G. T. Thaler, Kelly P. Ip, Fan Ren, Hyucksoo Yang
Publikováno v:
Journal of Crystal Growth. 287:149-156
A review is given of Ohmic and Schottky contacts to n- and p-type ZnO. It is relatively straightforward to form high-quality Ohmic contacts to n-type ZnO, with specific contacts resistivity in the range 10 −6 Ω cm 2 even for unnannealed contacts o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd7b530cd3f37771ede71e1060fd79ab
https://doi.org/10.1016/j.jcrysgro.2005.10.059
https://doi.org/10.1016/j.jcrysgro.2005.10.059
Autor:
J. Stapleton, Brent P. Gila, John Zavada, R. M. Frazier, M. E. Overberg, Fan Ren, C. R. Abernathy, G. T. Thaler, S. J. Pearton
Publikováno v:
Journal of Electronic Materials. 34:365-369
AlMnN and AlCrN have been synthesized by gas-source molecular beam epitaxy (GSMBE). Using optimized growth conditions and compositions, sccm films as determined by x-ray diffraction (XRD) and transmission electron microscopy, which also show room-tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ada4ae2c82b48b2d5c9780e1ff5f02ca
https://doi.org/10.1007/s11664-005-0112-7
https://doi.org/10.1007/s11664-005-0112-7
Autor:
C. R. Abernathy, Alexander Y. Polyakov, G. T. Thaler, R. M. Frazier, A. V. Govorkov, J. M. Zavada, Stephen J. Pearton, N. B. Smirnov
Publikováno v:
Semiconductor Science and Technology. 19:1169-1173
Electrical and optical properties of p-AlGaN films grown by metalorganic chemical vapour deposition and implanted with high doses (3 × 1016 cm−2) of 250 keV Mn and Cr ions are reported. Schottky diodes prepared on such implanted films after anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::777aa7ad3807cb574341381d532cb7cb
https://doi.org/10.1088/0268-1242/19/10/001
https://doi.org/10.1088/0268-1242/19/10/001
Autor:
Jihyun Kim, Fan Ren, N. B. Smirnov, Alexander Y. Polyakov, Weimin Chen, Brent P. Gila, Chang Chi Pan, Irina Buyanova, G. Y. Rudko, G.-T. Chen, R. M. Frazier, C. R. Abernathy, John Zavada, A. V. Govorkov, J.-I. Chyi, G. T. Thaler, Steve Pearton
Publikováno v:
Journal of Electronic Materials. 33:241-247
Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7203148d5a112a762475891d29bc7554
https://doi.org/10.1007/s11664-004-0186-7
https://doi.org/10.1007/s11664-004-0186-7
Autor:
Arthur F. Hebard, Cammy R. Abernathy, Weimin Chen, Stephen J. Pearton, G. T. Thaler, Yun Daniel Park, Irina Buyanova, Fan Ren, David P. Norton, R. M. Frazier, J. M. Zavada
Publikováno v:
Journal of Physics: Condensed Matter. 16:R209-R245
Recent results on achieving ferromagnetism in transition-metal-doped GaN, A1N and related materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of charge carrier ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf9ae5cea544a8ad89b4044e22cf46f
https://doi.org/10.1088/0953-8984/16/7/r03
https://doi.org/10.1088/0953-8984/16/7/r03
Autor:
C. R. Abernathy, Robert G. Wilson, John Zavada, G. T. Thaler, M. E. Overberg, Y. D. Park, Jihyun Kim, Stephen J. Pearton, Fan Ren
Publikováno v:
Thin Solid Films. :493-501
Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::030a30627e7ba91c92065ede893f4b2f
https://doi.org/10.1016/j.tsf.2003.07.012
https://doi.org/10.1016/j.tsf.2003.07.012