Zobrazeno 1 - 7
of 7
pro vyhledávání: '"G. T. Neugebauer"'
Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy
Publikováno v:
Journal of Electronic Materials. 24:505-510
A new etch system is described which produces pits on the technologically important B face of (111) and (211) CdTe and CdZnTe which are commonly used in mercury cadmium telluride (MCT) epitaxy. A ratio of approximately 10 wide: 1 deep is achieved wit
Autor:
J. J. Kennedy, James B. Parkinson, H. R. Vydyanath, G. T. Neugebauer, Brian E. Dean, J. Ellsworth, C. J. Johnson, J. L. Sepich, P. K. Liao
Publikováno v:
Journal of Electronic Materials. 22:1073-1080
(Cd,Zn)Te wafers containing Te precipitates have been annealed under well defined thermodynamic conditions at temperatures below and above the melting of Te. Results of the examination of the wafers with infrared microscopy before and after the annea
Publikováno v:
Journal of Electronic Materials. 22:1067-1071
Cd1−xZnxTe compounds of different compositions have been prepared at temperatures ranging from 400 to 1000°C by annealing elemental Te in sealed quartz ampoules, in an atmosphere comprising vapors of Cd and Zn whose partial pressures were varied b
Autor:
G. T. Neugebauer, William R. Wilcox
Publikováno v:
Acta Astronautica. 25:357-362
Azulene-doped naphthalene was directionally solidified during the vertical Bridgman-Stockbarger technique. Doping homogeneity and convection were determined as a function of the temperature profile in the furnace and the freezing rate. Convection vel
Autor:
J. L. Sepich, P. K. Liao, C. J. Johnson, J. J. Kennedy, J. Ellsworth, H. R. Vydyanath, G. T. Neugebauer, Brian E. Dean
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1476
Using a quasichemical approach, the total native defect concentration and the minimum deviation in stoichiometry have been calculated in CdTe crystals as a function of the Cd pressure at various temperatures. With this knowledge, CdTe and (Cd,Zn)Te w
Autor:
B. E. Dean, C. J. Johnson, J. L. Sepich, R. C. Dobbyn, J. Ellsworth, S. C. McDevitt, J. J. Kennedy, H. R. Vydyanath, G. T. Neugebauer, M. Kuriyama
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:1840
Synchrotron x‐ray topography studies have been conducted at the National Synchrotron Light Source at Brookhaven National Laboratory to correlate defects in HgCdTe epilayers with those in underlying CdTe family substrates. Infrared detectors have be
Publikováno v:
Scopus-Elsevier
During the growth of dendritic web silicon, an ideal material for fabrication of high efficiency solar cells, a thin ribbon of silicon single crystal is obtained. Due to thermal stresses characteristic in this growth process, dislocations and residua
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http://www.scopus.com/inward/record.url?eid=2-s2.0-0029520249&partnerID=MN8TOARS