Zobrazeno 1 - 10
of 152
pro vyhledávání: '"G. Stavrinidis"'
Autor:
K. Yu. Arutyunov, E. A. Sedov, V. V. Zavialov, A. Stavrinidis, G. Stavrinidis, Z. Chatzopoulos, A. Adikimenakis, G. Konstantinidis, N. Florini, P. Chatzopoulou, T. Kehagias, G. P. Dimitrakopulos, P. Komninou
Publikováno v:
Physics of Metals and Metallography. 124:53-57
Autor:
D. Vasilache, A. Nicoloiu, G. Boldeiu, I. Zdru, T. Kostopoulos, M. Nedelcu, A. Stavrinidis, C. Nastase, G. Stavrinidis, G. Konstantinidis, A. Dinescu, A. Muller
Publikováno v:
2022 International Semiconductor Conference (CAS).
Akademický článek
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Autor:
Dimitris Birmpiliotis, George J. Papaioannou, Matroni Koutsoureli, G. Stavrinidis, George Konstantinidis
Publikováno v:
Journal of Microelectromechanical Systems. 29:202-213
A method that allows the investigation of discharge transport mechanism in dielectric films used in MEMS capacitive switches or MIM capacitors or even bare dielectric films is presented. The method is based on monitoring the dielectric film surface o
Akademický článek
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Autor:
Christos Vazouras, Christina C. Lessi, Evangelia A. Karagianni, George Deligeorgis, A. Kostopoulos, G. Stavrinidis, Athanasios D. Panagopoulos
Publikováno v:
MIXDES
Gallium Nitride technology is entering dynamically in the area of manufacturing integrated circuits. In this paper the design of a Low Noise Amplifier is presented. The transistor that is used is a bilateral, conditionally stable transistor and it ha
Autor:
Dan Neculoiu, G. Stavrinidis, Alina-Cristina Bunea, George Konstantinidis, Antonis Stavrinidis, A. Kostopoulos
Publikováno v:
2019 IEEE Asia-Pacific Microwave Conference (APMC).
This paper presents a novel magnetoelectric GaN film bulk acoustic resonator (FBAR). The device integrates a 750 nm piezoelectric GaN layer with Molybdenum electrodes with a magnetostrictive Nickel layer, separated by 50 nm of silicon nitride. The FB
Autor:
A. Kostopoulos, George Boldeiu, George Konstantinidis, Alexandra Stefanescu, G. Stavrinidis, Ioana Giangu, Adrian Dinescu, Antonis Stavrinidis, Alexandru Muller, Gina C. Adam
Publikováno v:
IEEE Sensors Journal. 17:7383-7393
This paper presents the fabrication and characterization of a GHz operating surface acoustic wave (SAW)-based pressure sensor on a 1.2- $\mu \text{m}$ -thin GaN membrane. Two types of interdigitated transducers are manufactured using electron beam na
Autor:
George Konstantinidis, G. Stavrinidis, Matroni Koutsoureli, D. Birmpiliotis, George J. Papaioannou
Publikováno v:
Microelectronics Reliability. :614-618
The present paper aims to provide a better insight on the electrical properties of silicon nitride (SiNx) dielectric films with embedded carbon nanotubes (CNTs) that can be used in RF MEMS capacitive switches. The effect of the embedded CNTs on the l
Autor:
K. Michelakis, Nikos A. Chaniotakis, G. Stavrinidis, G. Sevrisarianos, V. Kontomitrou, Y. Alifragis, Giorgos Konstantinidis, M. Sevrisarianos, Giorgos Giannakakis
Publikováno v:
Microelectronic Engineering. 159:114-120
This work demonstrates a novel, simple method for the fabrication of dry Electroencephalogram (EEG) electrodes consisting of arrays of SU8 based microneedles. EEG electrodes fabricated this way will significantly reduce the duration and complexity of