Zobrazeno 1 - 10
of 67
pro vyhledávání: '"G. Staszczak"'
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 040704-040704-15 (2024)
This Review provides a thorough description of the experimental progress on the InN family and other relevant compounds. Although InN is of great interest, many of its properties are not well understood and are still puzzling researchers with a numbe
Externí odkaz:
https://doaj.org/article/3ff32d4852ba4f7683e15bcfd6c9b239
Autor:
P. Jaroszynski, E. Grzanka, M. Grabowski, G. Staszczak, I. Prozheev, R. Jakiela, F. Tuomisto, M. Bockowski
Europium doping of gallium nitride using a novel ultra-high pressure annealing method was investigated. Ammonothermal gallium nitride substrates (n-type) were used as europium ion implantation targets using beam energy of 490 keV and ion fluences ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c3b623dd6283650db8acd78349f8f4d
http://hdl.handle.net/10138/358528
http://hdl.handle.net/10138/358528
Akademický článek
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Autor:
J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, C. Skierbiszewski
Publikováno v:
Optics express. 30(15)
We report on III-nitride-based micro-light-emitting diodes (µLEDs) operating at 450 nm wavelength with diameters down to 2 µm. Devices with a standard LED structure followed by a tunnel junction were grown by plasma-assisted molecular beam epitaxy.
Publikováno v:
Journal of Applied Physics. 133:045304
Cross-sectional transmission electron microscopy studies often reveal a-type dislocations located either below or above the interfaces in InGaN/GaN structures deposited along the [0001] direction. We show that these dislocations do not emerge during
Autor:
I. Gorczyca, G. Staszczak, G. Targowski, E. Grzanka, J. Smalc-Koziorowska, K. Skrobas, T. Suski
Publikováno v:
Micro and Nanostructures. 169:207327
Autor:
Grzegorz Muziol, G. Staszczak, Szymon Grzanka, Katarzyna Pieniak, Ewa Grzanka, Anna Kafar, Czeslaw Skierbiszewski, Witold Trzeciakowski, Tadeusz Suski, Mikolaj Chlipala, Henryk Turski, Irina Makarowa
Publikováno v:
Optics express. 29(2)
Nitride-based light-emitting diodes (LEDs) are well known to suffer from a high built-in electric field in the quantum wells (QWs). In this paper we determined to what extent the electric field is screened by injected current. In our approach we used
Autor:
Piotr Perlin, Tadeusz Suski, Artem Bercha, G. Staszczak, Witold Trzeciakowski, Eva Monroy, Czeslaw Skierbiszewski, Grzegorz Muziol
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2020, 101 (8), pp.314-319. ⟨10.1103/PhysRevB.101.085306⟩
Physical Review B, 2020, 101 (8), pp.314-319. ⟨10.1103/PhysRevB.101.085306⟩
Physical Review B, American Physical Society, 2020, 101 (8), pp.314-319. ⟨10.1103/PhysRevB.101.085306⟩
Physical Review B, 2020, 101 (8), pp.314-319. ⟨10.1103/PhysRevB.101.085306⟩
We analyze the evolution of the exciton recombination energy ${E}_{\mathrm{PL}}$ and its pressure coefficient $d{E}_{\mathrm{PL}}/dp$, with the laser power density (LPD) exciting excitonic photoluminescence. Two $\mathrm{I}{\mathrm{n}}_{0.17}\mathrm{
Autor:
A. Kafar, A. Sakaki, R. Ishii, K. Shojiki, S. Stanczyk, K. Gibasiewicz, G. Staszczak, L. Marona, D. Schiavon, S. Grzanka, S. Krukowski, T. Suski, P. Perlin, M. Funato, Y. Kawakami
Publikováno v:
Optical Materials Express. 12:119
Within this work, we studied InGaN QWs with nominally 17% InN mole fraction grown within an 80 × 80 μm area with local misorientation angle change from 0.3° to 3.2°. We observed a significant improvement of the photoluminescence intensity for the
Akademický článek
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