Zobrazeno 1 - 10
of 25
pro vyhledávání: '"G. Sreevidya Varma"'
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Publikováno v:
Journal of the American Ceramic Society. 102:7244-7252
Publikováno v:
IEEE Transactions on Electron Devices. 66:1881-1886
Amorphous Ge15Te80– x In5Ag x ( $6\le {x} \le24$ ) thin films prepared in sandwich geometry exhibit memory switching behavior unlike the bulk sample that has shown both threshold switching for less current (1–2 mA) and memory switching for curren
Publikováno v:
Materials Today: Proceedings. 5:2705-2709
Bulk AgI-Ag2O-MoO3 (50:25:25) glasses have been prepared by melt quenching method (Microwave heating and quenched between two heavy steel plates). The electrical switching experiments have been carried out using a Keithley Source Meter (model 2410) c
Publikováno v:
Physica B: Condensed Matter. 526:84-88
Glasses in the TeO 2 -ZnO-BaF 2 system were prepared by standard melt quenching technique and were characterized for their thermal, optical and structural properties. Samples were found to show good thermal stability with values ranging above 100 °C
Publikováno v:
Journal of Non-Crystalline Solids. 471:251-255
This paper presents the thermal studies carried out using Differential Scanning Calorimetry on Ge15Te85 - In-x(x) glasses (1
Structural, mechanical and optical studies on ultrafast laser inscribed chalcogenide glass waveguide
Autor:
G. Sreevidya Varma, Arunbabu Ayiriveetil, Sundarrajan Asokan, Upadrasta Ramamurty, Tamilarasan Sabapathy, Abhishek Chaturvedi
Publikováno v:
Optical Materials. 66:386-391
Multi-scan waveguides have been inscribed in GeS2 glass sample with different pulse energies and translation speeds. Mechanical and structural changes on GeS2 binary glass in response to irradiation to 1047 nm femto-second laser pulses have been inve
The optical and mechanical properties of three Te-based chalcogenide glasses, whose compositions correspond to the intermediate phase centroids in their respective binary Ge–Te, ternary Ge–Te–In and quaternary Ge–Te–In–Ag systems, were ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9af436aace23e37f9ee697a4ee4af6d
https://hdl.handle.net/10356/153647
https://hdl.handle.net/10356/153647
Publikováno v:
Lecture Notes in Networks and Systems ISBN: 9783030231613
REV
REV
This paper describes the various studies performed on a representative quaternary thin film device of composition Ge15Te70In5Ag10, which could be an important material for phase change memory and data storage application. The I-V Characteristics (Swi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebc8e42f05c7dce4832eaa727722121
https://doi.org/10.1007/978-3-030-23162-0_37
https://doi.org/10.1007/978-3-030-23162-0_37
Autor:
B. N. Shivananju, Siva Umapathy, Gagandeep Singh, G. Sreevidya Varma, Sai Siva Gorthi, Sivakumar Gayathri, Sundarrajan Asokan, S. Sridevi
Publikováno v:
International Journal of Optomechatronics. 11:27-35
The reversible photostriction (photomechanical strain) in Ge35S65 chalcogenide thin film deposited by a solvent casting method has been monitored using a fiber Bragg grating (FBG) sensor. The shift in Bragg wavelength is used as a probing parameter t