Zobrazeno 1 - 10
of 24
pro vyhledávání: '"G. Shinomiya"'
Autor:
Hironori Takagi, G. Shinomiya, Shinji Tanaka, Yasushi Morioka, Yoshinori Nakagawa, Masanobu Haraguchi, Hiroshi Iijima, Atsushi Sakaki, Masaru Kubota, Naoki Hosokawa, Masatoshi Abe, Masuo Fukui, Takashi Mukai, Ken Kususe, Takae Takehara
Publikováno v:
Japanese Journal of Applied Physics. 43:23-29
We have investigated the thermal activation process of Mg dopant in Mg-doped GaN by secondary ion mass spectrometry (SIMS) and Hall measurement with the van der Pauw configuration. We have found a systematic relationship between the amount of the hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f12ec175ececad57fadb9947324fa12a
https://doi.org/10.1143/jjap.43.23
https://doi.org/10.1143/jjap.43.23
Autor:
Yoichi Kawakami, Akio Kaneta, Giichi Marutsuki, Tomotsugu Mitani, Sg. Fujita, Yukio Narukawa, Takashi Mukai, G. Shinomiya
Publikováno v:
physica status solidi (a). 192:110-116
Electroluminescence (EL) mapping has successfully been performed for In x Ga 1-x N single quantum well (SQW)-based light emitting diodes (LEDs) by employing scanning near-field optical microscopy (SNOM) at room temperature. The relative EL intensity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b6039a84df167344bf92e27ba0d97f9
https://doi.org/10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co
https://doi.org/10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co
Autor:
Akio Kaneta, Kenichi Inoue, Yoichi Kawakami, Shigeo Fujita, Takashi Mukai, G. Shinomiya, Koichi Okamoto, Masahide Terazima
Publikováno v:
physica status solidi (b). 228:81-84
Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::267a2756c35c18b49628ed268d1b8ab7
https://doi.org/10.1002/1521-3951(200111)228:1<81::aid-pssb81>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<81::aid-pssb81>3.0.co
Autor:
Koichi Okamoto, Sg. Fujita, Yoshinori Nakagawa, Giichi Marutsuki, Takashi Mukai, G. Shinomiya, Akio Kaneta, Yoichi Kawakami
Publikováno v:
physica status solidi (b). 228:153-156
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1281c1857dae55c457d6f60e4dd5f582
https://doi.org/10.1002/1521-3951(200111)228:1<153::aid-pssb153>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<153::aid-pssb153>3.0.co
Autor:
Tsunemasa Taguchi, Toshiro Tani, G. Shinomiya, Fumio Sasaki, Yoichi Yamada, Shuji Nakamura, Shunsuke Kobayashi
Publikováno v:
Journal of Luminescence. :242-245
Luminescence dynamics of Si-doped In x Ga 1-x N epitaxial films has been studied by means of time-resolved luminescence spectroscopy at low temperature. Under the band-to-band excitation the recombination dynamics shows a typical model of exciton loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6966a6db84bbe0a6c540314cba272d5
https://doi.org/10.1016/s0022-2313(97)00210-x
https://doi.org/10.1016/s0022-2313(97)00210-x
Publikováno v:
2012 Photonics Global Conference (PGC).
We fabricated the photonic metamaterial crystal structure and evaluate their photonic properties. The metamaterial photonic crystals studied here were periodic structures with two types of surface areas where two different dimension sprit ring resona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ffc058e6d2dccd70b67f256e71ed04
https://doi.org/10.1109/pgc.2012.6458020
https://doi.org/10.1109/pgc.2012.6458020
We focus on the excitation and propagation properties of surface plasmon polariton (SPP). We have developed a SPP excitation device in combination with a grating structures fabricated by using the scanning probe lithography. Perturbation approach was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c77f090f356cb9fa2bb752ec93acfd3
Autor:
Tsunemasa Taguchi, Ruisheng Zheng, Hiroki Ishibashi, G. Shinomiya, Shuji Nakamura, Yoichi Yamada, Hiromitsu Kudo
Publikováno v:
Journal of Luminescence. :1199-1201
Two recombination channels (higher- and lower-energy states) have been found in the efficient ultraviolet (UV) emission of an In0.08Ga0.92N epitaxial layer. The time-resolved luminescence spectra and the temperature dependence of decay time have show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78c73d8fa2804aaf5bf5ead9616379f4
https://doi.org/10.1016/s0022-2313(99)00596-7
https://doi.org/10.1016/s0022-2313(99)00596-7
Autor:
Yoshinori Nakagawa, S. Tanabe, G. Shinomiya, Toshihiro Okamoto, Masanobu Haraguchi, Toshiro Isu
Publikováno v:
Applied Physics A. 112:613-613
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c77e6b30dc6ba541ce1aebcd76f3f3
https://doi.org/10.1007/s00339-013-7825-x
https://doi.org/10.1007/s00339-013-7825-x
Autor:
Toshiro Tani, G. Shinomiya, Shuji Nakamura, Tsunemasa Taguchi, Kiyohiko Okada, Yoichi Yamada, Fumio Sasaki, Shunsuke Kobayashi
Publikováno v:
Japanese Journal of Applied Physics. 35:L787
Excitonic luminescence from GaN epitaxial layers has been studied under high-density excitation. The first experimental evidence for biexciton formation in GaN was obtained. The binding energy of the biexciton was estimated to be 5.3 meV. Therefore,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1527354eb0d8a54d60e08c211dbb7dd
https://doi.org/10.1143/jjap.35.l787
https://doi.org/10.1143/jjap.35.l787