Zobrazeno 1 - 10
of 64
pro vyhledávání: '"G. Shimon"'
Autor:
G. Shimon, A. O. Adeyeye
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097124-097124-8 (2015)
A direct and systematic investigation of the magnetization dynamics in individual circular Ni80Fe20 disk of diameter (D) in the range from 300 nm to 1 μm measured using micro-focused Brillouin Light Scattering (μ-BLS) spectroscopy is presented. At
Externí odkaz:
https://doaj.org/article/37286a824c7647d6887cfd47caf86ebd
Publikováno v:
Морфологія, Vol 14, Iss 2, Pp 24-29 (2020)
Background. A frequency of flat foot dominantes among the static deformations. Flat fооt has a progressive course and reduces life quality which is important for many medical specialties. Objective. To determine the condition of the longitudinal an
Externí odkaz:
https://doaj.org/article/a1ee20f8230443a2b8d7942a2178fd0b
Akademický článek
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Autor:
S. Ikegawa, K. Nagel, F. B. Mancoff, S. M. Alam, M. Arora, M. DeHerrera, H. K. Lee, S. Mukherjee, G. Shimon, J. J. Sun, I. Rahman, F. Neumeyer, H. Y. Chou, Ch. Tan, A. Shah, S. Aggarwal
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1ef90aad7f7532021bafef22e8505c
https://doi.org/10.1109/iedm45625.2022.10019513
https://doi.org/10.1109/iedm45625.2022.10019513
Publikováno v:
Морфологія, Vol 14, Iss 2, Pp 24-29 (2020)
Morphologia; Том 14, № 2 (2020); 24-29
Morphologia; Том 14, № 2 (2020); 24-29
Актуальність. Серед статичних деформацій плоскостопість за частотою займає домінуюче місце, має прогресуючий перебіг і знижує рівень я
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13cc3fabaae6d09da0f50d3b4cdda913
http://morphology.dma.dp.ua/article/view/210367
http://morphology.dma.dp.ua/article/view/210367
Publikováno v:
2021 IEEE 32nd Magnetic Recording Conference (TMRC).
There is a growing need for fast, endurant, non-volatile solutions for automotive that can meet the harsh requirements of automotive conditions. Automotive applications place severe demands memory devices. In the case of data retention, Automotive Gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8739002aa61aeee2276ade2ad0cbf1c4
https://doi.org/10.1109/tmrc53175.2021.9605113
https://doi.org/10.1109/tmrc53175.2021.9605113
Autor:
Sanjeev Aggarwal, H. K. Lee, Frederick B. Mancoff, Sumio Ikegawa, Kerry Joseph Nagel, Syed M. Alam, M. DeHerrera, Jijun Sun, Dimitri Houssameddine, Brian M. Hughes, G. Shimon
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
In this paper, we review key materials and process technology developments to successfully commercialize 1Gb standalone Spin-Transfer Torque (STT) MRAM. Magnetic tunnel junction (MTJ) stack and process integration were developed to reduce the operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f931835752980ee4142ca8f2daf995
https://doi.org/10.1109/imw51353.2021.9439616
https://doi.org/10.1109/imw51353.2021.9439616
Autor:
J. J. Sun, M. DeHerrera, G. Shimon, Frederick B. Mancoff, J. Janesky, H. K. Lee, Syed M. Alam, Sanjeev Aggarwal, H. Lu, Brian M. Hughes, Kerry Joseph Nagel, Hamid Almasi, Thomas W. Andre, Sumio Ikegawa
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we describe a fully-functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions (pMTJ’s). Electrical short flows were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::585be30e388557e05d855de226372384
https://doi.org/10.1109/iedm19573.2019.8993516
https://doi.org/10.1109/iedm19573.2019.8993516
Publikováno v:
Spin Wave Confinement ISBN: 9781315110820
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad580c64cbdf31b6cf28dfd683f0a49f
https://doi.org/10.1201/9781315110820-5
https://doi.org/10.1201/9781315110820-5
Autor:
Jon M. Slaughter, J. J. Sun, Sarin A. Deshpande, N. L. Chung, M. Hossain, Frederick B. Mancoff, Renu Whig, Sumio Ikegawa, Y. S. You, S. T. Woo, C. C. Wang, J. Wong, Naganivetha Thiyagarajah, T. Ling, J. W. Ting, H.-J. Chia, G. Shimon, J. Janesky, Ming-Wei Lin, Chim Seng Seet, H. Yang, Michael Tran, Syed M. Alam, Vinayak Bharat Naik, H. Lu, Thomas W. Andre, Taiebeh Tahmasebi, C. Hai, T. H. Chan, Dimitri Houssameddine, K. Yamane, Rajesh R. Nair, Danny Pak-Chum Shum, S. Y. Siah, K. W. Wong, M. DeHerrera, R. Chao, Sanjeev Aggarwal, Kerry Joseph Nagel, Kangho Lee
Publikováno v:
2017 Symposium on VLSI Technology.
Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density manufacturability at small geometries. In this pape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8418750ba7a8213eb54d445cb6c292c
https://doi.org/10.23919/vlsit.2017.7998174
https://doi.org/10.23919/vlsit.2017.7998174