Zobrazeno 1 - 10
of 205
pro vyhledávání: '"G. Salmer"'
Autor:
E. L. Kollberg, André Vander Vorst, T. Berceli, Peter Russer, Nikolaos K. Uzunoglu, G. Gerosa, Jozef Modelski, Jørgen Bach Andersen, Irina Vendik, Giuseppe Pelosi, Leo P. Ligthart, Antti V. Räisänen, A. Madjar, J. Costa Freire, G. Salmer, Roberto Sorrentino, M. Salazar-Palma, T. Oxley, O.G. Vendik
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:1056-1072
An overview of microwave activities and infrastructures in Europe is presented. The material is organized in 17 sections, each devoted to a country or group of countries and prepared by an. internationally renowned microwave expert. In general, each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b0430cfd32dae2d0ef44df4e85eb35
https://doi.org/10.1109/22.989994
https://doi.org/10.1109/22.989994
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 8:256-269
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74cd308c67ab9d02bd1a5dd14b79f343
https://doi.org/10.1002/(sici)1099-047x(199805)8:3<256::aid-mmce9>3.0.co
https://doi.org/10.1002/(sici)1099-047x(199805)8:3<256::aid-mmce9>3.0.co
Publikováno v:
Journal of Electronic Materials. 26:16-20
Implantations of Be, Be + P, Be + F, Be + P +F, BeF and Mg + P into GaAs and AlGaAs/InGaAs/GaAs pseudomorphic heterostructure were evaluated by secondary ion mass spectrometry profilings and electrical resistivity measurements. Rapid thermal annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb5e666bf0717483738fb8a3021cb836
https://doi.org/10.1007/s11664-997-0126-4
https://doi.org/10.1007/s11664-997-0126-4
Autor:
B. Splingart, H. Thomas, Erhard Kohn, G. Salmer, Jikui Luo, D. V. Morgan, Didier Theron, K.-M. Lipka
Publikováno v:
Journal of Electronic Materials. 24:913-916
Low temperature grown GaAs has been fabricated containing a limited amount of excess arsenic. The material has a low conductivity in the order of 100KΩ cm, due to hopping in a deep donor band. This σ-LT-GaAs was grown reproducibly by using the latt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c484648fc1f5babff2e4ddcb76520146
https://doi.org/10.1007/bf02653341
https://doi.org/10.1007/bf02653341
Publikováno v:
Microwave and Optical Technology Letters. 9:91-95
This article describes an accurate method for the extraction of dual-gate field-effect-transistor (FET) parasitic elements. Parallel and series elements are separately determined in two different steps under the cold regime (Vds = 0 V). The effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b024d9ccd772101d3427656f2fbd9a
https://doi.org/10.1002/mop.4650090209
https://doi.org/10.1002/mop.4650090209
Publikováno v:
Solid-State Electronics. 38:917-929
A hydrodynamic energy model is efficiently used for the simulation of a dual-gate lattice matched MODFET at room temperature. The results obtained give a good insight of the device physics and permit through the systematic use of the model to predict
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d51bbe5d1aacfe5ea6325c21f712524a
https://doi.org/10.1016/0038-1101(94)00171-b
https://doi.org/10.1016/0038-1101(94)00171-b
Publikováno v:
IEEE Transactions on Electron Devices. 41:299-305
We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9904af3a98b6e496be4403507ebf194d
https://doi.org/10.1109/16.275213
https://doi.org/10.1109/16.275213
Publikováno v:
IEEE Electron Device Letters. 22:163-165
In this letter, an investigation of pseudomorphic Ga/sub 0.25/Al/sub 0.75/As/Ga/sub 0.80/In/sub 0.20/As/GaAs heterostructure insulated-gate FETs (HIGFET) far microwave power applications is presented. Devices have been fabricated using Au/WSi self-al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d69dc6070cc962a63ff71c4c7f25d316
https://doi.org/10.1109/55.915599
https://doi.org/10.1109/55.915599
Publikováno v:
IEEE Electron Device Letters. 20:203-205
In this letter, 0.35 /spl mu/m gate length pseudomorphic AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect-transistors (HIGFETs) have been fabricated on GaAs. The short-channel effects have been reduced by using a sidewall technology. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d85bb7f0eb6da8c2fd6b9b6043139908
https://doi.org/10.1109/55.761015
https://doi.org/10.1109/55.761015
Autor:
Tarek Shawki, G. Salmer
Publikováno v:
European Transactions on Telecommunications. 1:421-428
A study of the variations of the small signal parameters of subhalf-micron-gate Het-erostructure Field Effect Transistors HFETs with device scaling (aspect ratio), gate offset in the recessed zone and hot-carrier confinement by buffer barriers is car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980914a0e542e710be018bf1dd15a513
https://doi.org/10.1002/ett.4460010409
https://doi.org/10.1002/ett.4460010409