Zobrazeno 1 - 10
of 39
pro vyhledávání: '"G. Sai Saravanan"'
Publikováno v:
IEEE Access, Vol 9, Pp 141504-141512 (2021)
This paper presents design, mathematical analysis, and measurement of low noise single-stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar complementary metal-oxide-semiconductor (BiCMOS) silicon-germanium (SiGe) process
Externí odkaz:
https://doaj.org/article/61f9c6b656094bf39868aaf2a529328d
Publikováno v:
IEEE Access, Vol 9, Pp 141504-141512 (2021)
This paper presents design, mathematical analysis, and measurement of low noise single-stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar complementary metal-oxide-semiconductor (BiCMOS) silicon-germanium (SiGe) process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49f56120a919899dc87565a9d7918b88
https://ieeexplore.ieee.org/document/9570337/
https://ieeexplore.ieee.org/document/9570337/
Publikováno v:
2022 32nd International Conference Radioelektronika (RADIOELEKTRONIKA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dba8f507902af03492fae6ec5bba9f3
https://doi.org/10.1109/radioelektronika54537.2022.9764914
https://doi.org/10.1109/radioelektronika54537.2022.9764914
Publikováno v:
2021 2nd International Conference on Range Technology (ICORT).
This paper presents the design and demonstration of a 35 GHz transmitter for RF-over-fiber (RFoF) communication link using complementary metal-oxide-semiconductor (CMOS) compatible silicon-photonics technology. This proof of the concept has addressed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9c41a63ce297e8ae38a6b259489058
https://doi.org/10.1109/icort52730.2021.9581881
https://doi.org/10.1109/icort52730.2021.9581881
Publikováno v:
International Journal of Circuit Theory and Applications. 47:542-548
This paper presents the design and implementation of a 7-bit S-band digital passive phase shifter using Complementary Metal-Oxide-Semiconductor (CMOS) 65-nm technology in 2.6- to 3.2-GHz frequency band. New switched delay network topology has been us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0784ceab3be819c2d87b375c86623335
https://doi.org/10.1002/cta.2600
https://doi.org/10.1002/cta.2600
Akademický článek
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Autor:
S. Dhamodaran, K. Muraleedharan, Rangarajan Muralidharan, D.V. Sridhara Rao, K. Mahadeva Bhat, Anand P. Pathak, G. Sai Saravanan, H. P. Vyas, R. Balamuralikrishnan
Publikováno v:
Materials Science in Semiconductor Processing. 30:62-74
During post-deposition alloying of AuGe/Ni/Au ohmic contacts to microwave transistors, there is interdiffusion of alloy materials and GaAs into each other. Outdiffusion from substrate greatly influences the surface roughness of the contacts as a func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95649aebe413d4471c177a1d3192514
https://doi.org/10.1016/j.mssp.2014.09.041
https://doi.org/10.1016/j.mssp.2014.09.041
Autor:
D. C. Agarwal, Anand P. Pathak, G. Sai Saravanan, N. Srinivasa Rao, Pawan K. Kulriya, D.K. Avasthi, N. Sathish, V. Saikiran, G. Devaraju
Publikováno v:
Solid State Communications. 150:2122-2126
Ge nanocrystals embedded in an SiO2 matrix were prepared by the atom beam co-sputtering (ABS) method from a composite target of Ge and SiO2. The as-deposited films were rapid thermally annealed at the temperatures 700 and 800 °C in nitrogen ambience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4b6a15e545d9655a945ffbf6e14ca1
https://doi.org/10.1016/j.ssc.2010.09.014
https://doi.org/10.1016/j.ssc.2010.09.014
Publikováno v:
Progress In Electromagnetics Research C. 16:111-125
Packaging of planar MMICs poses a unique challenge at microwave frequencies as the dimensions of the encapsulating cavity are comparable to wavelength at the operational frequencies. In addition, the efiect of ground loops (caused by bond wires expos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d3caffae3bf995f3faa841ca04f8765
https://doi.org/10.2528/pierc10061406
https://doi.org/10.2528/pierc10061406
Publikováno v:
Radiation Effects and Defects in Solids. 163:737-748
The active layers of Metal Semiconductor Field Effect Transistors (MESFETs) are obtained by Si29+ ion implantation in GaAs. Implantation was done at 35 keV with a higher dose near the wafer surface for facilitating easier formation of ohmic contacts,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583c0beaa2345a9eaecb9126964e0ce1
https://doi.org/10.1080/03067310701643014
https://doi.org/10.1080/03067310701643014