Zobrazeno 1 - 10 of 19 pro vyhledávání: '"G. S. Hobson"'
1
Classification of Road Traffic from Microwave Profiles
Autor: G. S. Hobson, H. Roe
Publikováno v: 21st European Microwave Conference, 1991.
A microwave system has been developed which can automatically classify vehicles in real time into at least five groups: cars, light goods, medium goods, heavy goods and buses (bicycles were too infrequent to be assessed) to accuracies of about 75%. T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6dda00cdf99ce2fbe58e1174e7e8e85a
https://doi.org/10.1109/euma.1991.336491
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2
Recent developments in transferred electron devices
Autor: G S Hobson
Publikováno v: Journal of Physics E: Scientific Instruments. 7:229-240
After an introductory description of the foundations the review outlines recent advances in the understanding and technology of transferred electron devices. Development of numerical techniques for calculating averages of the electron momentum distri
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1486d9f7b0425e0cc4442a06618fabb2
https://doi.org/10.1088/0022-3735/7/4/002
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5
Measurement of the variation of frequency with the ambient temperature of microwave semiconductor oscillators
Autor: G S Hobson
Publikováno v: Journal of Physics E: Scientific Instruments. 3:801-805
A description is given of the automatic measurement of the frequency of c.w. microwave semiconductor oscillators using a frequency coincidence technique. The equipment is simple to use and does not require skilled readjustments for use at any centre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c4e0ab32925363806a1c0a94b281d13
https://doi.org/10.1088/0022-3735/3/10/314
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6
The effect of uniaxial stress on the two-phonon lattice absorption bands of silicon
Autor: E G S Paige, G S Hobson
Publikováno v: Proceedings of the Physical Society. 88:437-448
The effect of a uniaxial stress on the two-phonon absorption bands of a diamond-type crystal is considered qualitatively and estimates of the magnitude of some of the contributory factors are made. This is based on an approach in which the absorption
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0aee379a9ce6806a424debf3abbe6202
https://doi.org/10.1088/0370-1328/88/2/316
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10
Three-dimensional limitations on space-charge growth in transferred-electron devices
Autor: G S Hobson
Publikováno v: Journal of Physics D: Applied Physics. 2:1203-1213
The influence of diffusion and the lateral dimensions on the growth of space-charge non-uniformities from random electron density fluctuations is calculated for a negative differential resistance material. The effect of these considerations on the pe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b67711a8b454f1b77a7de9de1370f11
https://doi.org/10.1088/0022-3727/2/9/302
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