Zobrazeno 1 - 10
of 20
pro vyhledávání: '"G. S. Gagis"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:333-337
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b42d03a19eff5b785595eced26f29dc
https://doi.org/10.1134/s1027451022030338
https://doi.org/10.1134/s1027451022030338
Autor:
V. I. Kuchinskii, B. V. Pushnyi, D. Yu. Kazantsev, R. V. Levin, V. I. Vasil’ev, A. E. Marichev, B. Ya. Ber, G. S. Gagis
Publikováno v:
Technical Physics Letters. 46:961-963
When studying doped anisotypic heterostructures with Ga1 – xInxAsyP1 – y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 – xInxAsyP1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce2e19e8a222acb96120be083cd8732
https://doi.org/10.1134/s1063785020100053
https://doi.org/10.1134/s1063785020100053
Autor:
V. I. Vasil’ev, A. E. Marichev, D. Yu. Kazantsev, R. V. Levin, D. V. Chistyakov, G. S. Gagis, V. I. Kuchinskii, A. S. Vlasov, M. P. Scheglov, T. B. Popova, B. V. Pushnyi, Yu. Kudriavtsev, B. Ya. Ber
Publikováno v:
Semiconductors. 53:1472-1478
GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789fcc671df841550b64404cdf34ab53
https://doi.org/10.1134/s106378261911006x
https://doi.org/10.1134/s106378261911006x
Autor:
V. I. Kuchinskii, M. P. Scheglov, T. B. Popova, D. Yu. Kazantsev, A. S. Vlasov, R. V. Levin, B. Ya. Ber, V. I. Vasil’ev, G. S. Gagis, D. V. Chistyakov, A. E. Marichev
Publikováno v:
Technical Physics Letters. 45:1031-1034
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a102d9aa2246b83c2b86a63eac06df50
https://doi.org/10.1134/s1063785019100213
https://doi.org/10.1134/s1063785019100213
Autor:
V. I. Kuchinskii, G. S. Gagis, A. G. Deryagin, R. V. Levin, D. Yu. Kazantsev, V. I. Vasil’ev, B. Ya. Ber
Publikováno v:
Technical Physics Letters. 43:905-908
A study by secondary-ion mass spectrometry of InAs x P y Sb1–x–y/InAs heterostructures (x > 0.55) grown by vapor-phase epitaxy for lattice-mismatched with substrates samples revealed a noticeable and extended (~800 nm) exponential variation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaa02724a9409e0acfd9792a6fc22e9b
https://doi.org/10.1134/s1063785017100121
https://doi.org/10.1134/s1063785017100121
Autor:
R. V. Levin, V. I. Kuchinskii, B. V. Pushnyi, A. E. Marichev, G. S. Gagis, N. D. Prasolov, A. B. Gordeeva, N. M. Shmidt
Publikováno v:
Technical Physics Letters. 43:88-91
Specific features of mechanical-stress relaxation in InGaAsP/InP heterostructures for 1064 nm laser radiation converters have been studied. It is established that stress relaxation via the formation of an ordered relief on the surface of solid-soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da8ce5ec15980a3dfff871f19f05d39c
https://doi.org/10.1134/s1063785017010230
https://doi.org/10.1134/s1063785017010230
Autor:
R. V. Levin, V. I. Vasil’ev, B. Ya. Ber, A. N. Gorokhov, V. I. Kuchinskii, M. P. Scheglov, G. S. Gagis, D. Yu. Kazantsev, B. V. Pushnyi, T. B. Popova, A. E. Marichev
Publikováno v:
Technical Physics Letters. 44:1127-1129
Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecba049cf21e3b0b5bd40e0c19f1eaa1
https://doi.org/10.1134/s1063785018120593
https://doi.org/10.1134/s1063785018120593
Publikováno v:
Semiconductors. 49:962-966
Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2f4030360155944028ce81f2c162327
https://doi.org/10.1134/s1063782615070234
https://doi.org/10.1134/s1063782615070234
Autor:
R. V. Lyovin, A. G. Deryagin, M. N. Mizerov, V. I. Kuchinskii, B. V. Pushnyi, G. S. Gagis, V. I. Vasil’ev
Publikováno v:
Technical Physics Letters. 38:900-903
Epitaxial growth of Al u Ga1 − u − x In x As y Sb1 − y and Al u Ca1 − u As y Sb1 − y solid solutions has been investigated. Epitaxial layers with the compositions 0.02 < u < 0.11, 0.88 < x < 0.93, and 0.88 < y < 0.98 have been grown on InAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e0ce9e7431b6c2f8167083e6cd4b39
https://doi.org/10.1134/s1063785012100148
https://doi.org/10.1134/s1063785012100148
Autor:
E. P. Marukhina, A. E. Marichev, M. P. Scheglov, G. S. Gagis, B V Pushnyii, D. Yu. Kazantsev, R. V. Levin, T. B. Popova, I V Vasil’ev, B. Ya. Ber
Publikováno v:
Journal of Physics: Conference Series. 1135:012076
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b836a31533c1e3c4bbf098cc7a97956
https://doi.org/10.1088/1742-6596/1135/1/012076
https://doi.org/10.1088/1742-6596/1135/1/012076