Zobrazeno 1 - 3
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pro vyhledávání: '"G. S. Fritz"'
Publikováno v:
Microelectronic Engineering. :199-205
Design rules for lateral pn-junction detectors have been established and verified by numerical simulations and measurements of the detector efficiency for different geometries. The test devices were fabricated by diffusion of phosphorus into boron-do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29008f0d62c26efab0b051ae7a7e58a0
https://doi.org/10.1016/s0167-9317(01)00516-0
https://doi.org/10.1016/s0167-9317(01)00516-0
Autor:
G. S. Fritz, Dieter P. Kern
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:2512
An implementation of the Rau-detector has been investigated with respect to its use for mark detection in low-energy electron-beam lithography. The generation of signals from marks commonly used in electron-beam lithography is discussed. With this de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa755c2f2b020297a90ecbcc77d66e5
https://doi.org/10.1116/1.1421546
https://doi.org/10.1116/1.1421546
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2836
A lateral pn-junction detector (l-pn detector) for low energy backscattered electrons has been designed, fabricated, and characterized. General design rules for l-pn detectors have been established. The detector assembly consists of a n-type finger s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f156dd858533fd0bcab30f34b21169c5
https://doi.org/10.1116/1.591078
https://doi.org/10.1116/1.591078