Zobrazeno 1 - 10
of 28
pro vyhledávání: '"G. Roters"'
Publikováno v:
Thin Solid Films. 428:216-222
The quality of the SiO2/Si interface is of crucial importance in the development and performance of sub 0.1 μm technologies. The knowledge of the chemical composition of the interface is an important piece of information in the preparation of ultra-
Publikováno v:
The European Physical Journal A. 6:451-461
Excitation functions of the γ0 capture transition in 12C(α,γ)16O at θγ= 90˚ were obtained using a 4 × 4'' BGO crystal in close geometry (E= 0.94 to 3.39 MeV) and a 2 × 2'' BGO crystal in far geometry (E= 1.69 to 3.29 MeV), where the study of
Publikováno v:
Materials Science and Engineering: B. 54:153-160
A pyrogenic steam generator is implemented in a conventional AST SHS2800e RTP system to produce H2O gas ambient for oxide growth enhancement in a Wet Rapid Thermal Oxidation process (WRTO). For similar thermal budgets of wet and dry oxidation, the gr
Autor:
W.H. Schulte, N. Piel, Israel Jacob Rabin Baumvol, M. Mehrhoff, J. Domke, M Aliotta, Markus Berheide, C. Rolfs, G. Roters, S. Kubsky, F. Gorris, Hans Werner Becker, L. Borucki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 132:671-684
A γ-ray detection system with nearly 4π geometry for applications in materials science is described. The energy resolution of the NaI(Tl)-bore hole detector was found to be about 2% for 10 MeV γ-rays. The total detection efficiency has been determ
Publikováno v:
Nuclear Physics A. 621:161-164
Autor:
C. Iliadis, J. Görres, J.G. Ross, K.W. Scheller, M. Wiescher, R.E. Azuma, G. Roters, H.P. Trautvetter, H.C. Evans
Publikováno v:
Nuclear Physics A. 571:132-158
Autor:
P. Duhamel, Jean Vanhorenbeeck, Mohammed Benjelloun, G. Roters, H. P. Trautvetter, Peter Lipnik, Th-H. Delbar, E. Lienard, Pol Leleux, William S. Rodney, C. Rolfs, W. Galster
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 321:521-528
The 1- resonance at 512 keV in N-14 was measured precisely by detecting recoil protons after scattering C-13 beams on a thick CH2 target. Proton spectra were analyzed with a Breit-Wigner formalism. It is shown that energy loss and straggling of the p
Autor:
Patrick Decrock, Marc Huyse, Jean Vanhorenbeeck, U. Schroeder, Peter Lipnik, Th. Delbar, C. Rolfs, W. Galster, William S. Rodney, D. Mertens, Jean Vervier, J. M. Lambert, P. Duhamel, P. Van Duppen, I. Licot, G. Roters, E. Lienard, K. Wolke, H. P. Trautvetter, Pierre Leleux
Publikováno v:
Physical Review C. 44:2776-2787
A feasibility study was undertaken for the measurement of the resonance at E(r) = 545 keV in the N-13(p,gamma)O-14 reaction, using intense radioactive ion beams. The analog resonance at E(r) = 512 keV in C-12(p,gamma)N-14 was chosen as a test case, l
Publikováno v:
10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.
Dr. Bob Lojek presented at the 7' International Conference on Advanced Thermal Processing of Semiconductors (RTP'99) in Colorado Springs in 1999 an interesting, professionally true summary about the early history of rapid thermal processing. For the
Publikováno v:
AIP Conference Proceedings.
The capture reaction 4He(12C,γ)16O as well as the elastic scattering process 4He(12C,12C)4He have been investigated in the energy range of Ecm=0.9−3.4 MeV. An extended, windowless and recirculating 4He‐gas target system with large apertures was