Zobrazeno 1 - 10
of 482
pro vyhledávání: '"G. Reimbold"'
Publikováno v:
The U.S. Workshop on the Physics and Chemistry of II-VI Materials
The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Oct 2018, Passadena-CA, United States
Journal of Electronic Materials
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, 48 (10), pp.6113-6117. ⟨10.1007/s11664-019-07213-7⟩
Journal of Electronic Materials, 2019, 48 (10), pp.6113-6117. ⟨10.1007/s11664-019-07213-7⟩
The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Oct 2018, Passadena-CA, United States
Journal of Electronic Materials
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, 48 (10), pp.6113-6117. ⟨10.1007/s11664-019-07213-7⟩
Journal of Electronic Materials, 2019, 48 (10), pp.6113-6117. ⟨10.1007/s11664-019-07213-7⟩
International audience; Both low frequency noises and electrically active defects have been investigated for two technological variants, i.e. optimized and non-optimized, of the HgCdTe p on n technology applied to the mid wave infrared (MWIR) blue ba
Autor:
Charles Leroux, Florian Domengie, Blend Mohamad, Carlos Suarez Segovia, Xavier Garros, P. Blaise, G. Reimbold, Gerard Ghibaudo, Pushpendra Kumar
Publikováno v:
ECS Transactions. 80:237-245
Autor:
Francesca Campabadal, G. Reimbold, J. Muñoz-Gorriz, Paul K. Hurley, D. Blachier, Scott Monaghan, Jordi Suñé, Enrique Miranda, Karim Cherkaoui
Publikováno v:
IEEE Transactions on Device and Materials Reliability
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC. Repositorio Institucional del CSIC
instname
The connection between the spatial location of catastrophic breakdown spots occurring in metal-insulator-metal capacitors with a high-permittivity dielectric film (HfO) and their respective sizes is investigated. Large area structures ( 10^{4}-10^{5}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d71e30a5a4c5cf2fea330be49f27fe
https://hdl.handle.net/10468/13496
https://hdl.handle.net/10468/13496
Autor:
C. Diouf, A. Subirats, G. Reimbold, F. Gaillard, Xavier Federspiel, X. Garros, Vincent Huard, Mustapha Rafik
Publikováno v:
2018 IEEE International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.P-RT.6-1-P-RT.6-5, ⟨10.1109/IRPS.2018.8353688⟩
IRPS
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.P-RT.6-1-P-RT.6-5, ⟨10.1109/IRPS.2018.8353688⟩
IRPS
International audience; A new method denoted SRP is proposed to quicklyevaluate reversible and permanent components responsible forBTI degradation. It is based on a particular normalization ofNBTI drifts measured during DC stress and recovery. The or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1283fc117d0b21637f29ed07d846c1c4
https://hal-cea.archives-ouvertes.fr/cea-02187807
https://hal-cea.archives-ouvertes.fr/cea-02187807
Autor:
G. Reimbold, D. Bauza, Laurent Rubaldo, Pierre Guinedor, A. Kerlain, T. Broult, V. Destefanis, Alexandre Brunner
Publikováno v:
19th International Conference on Extended Defects in Semiconductors (EDS)
19th International Conference on Extended Defects in Semiconductors (EDS), eds2016.sciencesconf.org, Jun 2018, Thessaloniki, Greece
Journal of Physics: Conference Series
Journal of Physics: Conference Series, IOP Publishing, 2019, 1190, pp.012012. ⟨10.1088/1742-6596/1190/1/012012⟩
Journal of Physics: Conference Series, 2019, 1190, pp.012012. ⟨10.1088/1742-6596/1190/1/012012⟩
19th International Conference on Extended Defects in Semiconductors (EDS), eds2016.sciencesconf.org, Jun 2018, Thessaloniki, Greece
Journal of Physics: Conference Series
Journal of Physics: Conference Series, IOP Publishing, 2019, 1190, pp.012012. ⟨10.1088/1742-6596/1190/1/012012⟩
Journal of Physics: Conference Series, 2019, 1190, pp.012012. ⟨10.1088/1742-6596/1190/1/012012⟩
session Fr1: Defects and Device Structures (027); International audience; Extended electrically active defects have been investigated in Short Wave InfraRed (SWIR) HgCdTe n on p photodiodes, using the Deep Level Transient Spectroscopy (DLTS) techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65391669f0b1cb47a192dbac702513f3
https://hal.archives-ouvertes.fr/hal-02016057
https://hal.archives-ouvertes.fr/hal-02016057
Autor:
C. Fenouillet-Beranger, Perrine Batude, M. Casse, B. Mathieu, G. Reimbold, Gerard Ghibaudo, Laurent Brunet, M. Vinet, K. Triantopoulos
Publikováno v:
2017 IEDM Technical Digest
2017 IEEE International Electron Devices Meeting (IEDM)
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩
2017 IEEE International Electron Devices Meeting (IEDM)
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩
session 7: Characterization, Reliability, and Yield: Reliability of Advanced Devices (7.6); International audience; We present for the first time an experimental study of thermal effects in 3D sequential integration, including Self-Heating Effect (SH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::640d5fdfc95e64cdca800fe42ef9b135
https://hal.archives-ouvertes.fr/hal-02050229
https://hal.archives-ouvertes.fr/hal-02050229
Autor:
J. Pelloux-Prayer, Mikael Casse, Zaiping Zeng, S. Barraud, G. Reimbold, François Triozon, Yann-Michel Niquet
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, France. pp.1-3
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, France. pp.1-3
We hereby present the experimental validation of a semi-analytical model for the size-dependent carrier mobility in FDSOI TriGate Nanowire transistors. The model is based on simple interpolation between a square narrow Si NW and wide FDSOI or vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8bbd8f9ea57e46d618cbb487ebd6f9b
https://hal.archives-ouvertes.fr/hal-02143370
https://hal.archives-ouvertes.fr/hal-02143370
Autor:
C. Fenouillet-Beranger, Laurent Brunet, Perrine Batude, K. Triantopoulos, G. Reimbold, Gerard Ghibaudo, Mikael Casse
Publikováno v:
2017 S3S Proceedings
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩
session: Modeling and Characterization; International audience; We present an experimental study of thermal effects in thin film FDSOI MOSFETs, with a focus on the impact of self-heating effect (SHE) on drain current. We have performed thermal resist
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
A novel capacitive structure embedding the FDSOI film serves as a test platform to extract Dit at top (film/BOX) and bottom (BOX/substrate) interfaces by a single CV/GV measurement. Fully depleted SOI (FDSOI) bare wafers interfaces quality is evaluat
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
This paper experimentally explores the analog performance of Self-Cascode structures composed by SOI Nanowire nMOSFETs operating near the subthreshold regime. The composite structure uses transistors with distinct channel widths, biased in several ba