Zobrazeno 1 - 10
of 45
pro vyhledávání: '"G. RAMANA MURTHY"'
Publikováno v:
Journal of Engineering Science and Technology, Vol 8, Iss 6, Pp 764-777 (2013)
This paper presents a novel high-speed and high-performance multiplexer based full adder cell for low-power applications. The proposed full adder is composed of two separate modules with identical hardware configurations that generate Sum and Carry s
Externí odkaz:
https://doaj.org/article/9b2ca913a73d4ffaa1322d6478eb5fa5
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 4, Iss , Pp 100134- (2023)
Data transfer between components, continuous device monitoring, and other features are possible with an IoT-based energy management system. Due to its lightweight, compact, and expandable characteristics, the Message Queuing Telemetry Transport proto
Externí odkaz:
https://doaj.org/article/dd65730de77942d3ba2107d9b5edb5bc
Publikováno v:
International Journal on Recent and Innovation Trends in Computing and Communication. 10:329-336
Hybrid-logic implementation is highly suitable in the design of a full adder circuit to attain high-speed low-power consumption, which helps to design n any high speed ALUs that can be used in varies processors and applicable for high speed IoT- Appl
Publikováno v:
Journal of Nanomaterials. 2022:1-8
This paper presents a low-voltage high-gain wideband three-stage true-class-AB amplifier. This is realized in the 0.18 μm CMOS process. The three-stage class-AB amplifier is proposed based on a compensation topology called nested Miller compensation
Autor:
Hima Bindu Katikala, Thatha Pavan Kumar, Bhimavarapu Manideep Reddy, Bandireddy V.V.Pavan Kumar, G. Ramana Murthy, Saurav Dixit
Publikováno v:
Materials Today: Proceedings. 69:576-581
Autor:
G. Ramana Murthy, Azlan Abd. Aziz, Md. Jakir Hossen, Jesmeen Mohd Zebaral Hoque, Jaya Ganesan, Tawsif K.
Publikováno v:
International Journal of ADVANCED AND APPLIED SCIENCES. 8:102-111
Smart-home systems achieved great popularity in the last decade as they increase the comfort and quality of life. Reduction of energy consumption became a very important desiderate in the context of the explosive technological development of modern s
Publikováno v:
Journal of University of Shanghai for Science and Technology. 23:211-215
For high speed application the static random access memory is mostly demandable. Such kind of device should possess additive parameters that can withstand during transistor scaling process. Their exist static noise margin (SNM) which degrades the dev
Publikováno v:
EIGHTH INTERNATIONAL CONFERENCE NEW TRENDS IN THE APPLICATIONS OF DIFFERENTIAL EQUATIONS IN SCIENCES (NTADES2021).
Publikováno v:
Sustainable Energy Technologies and Assessments. 53:102506
Publikováno v:
2021 5th International Conference on Trends in Electronics and Informatics (ICOEI).
The primary goal of developing low power consumption device in this modern era is a real test for every VLSI designer. By the process of control scattering, we can minimize the amount of power consumption and area occupying in the VLSI (Very large-Sc