Zobrazeno 1 - 3
of 3
pro vyhledávání: '"G. R.Paredes Rubio"'
Autor:
J. E. Urbina-Alvarez, Yuri V. Vorobiev, Tetyana Torchynska, G. R.Paredes Rubio, S. Jiménez Sandoval, A.I. Diaz Cano
Publikováno v:
Microelectronics Journal. 39:507-511
The preparation method and characterization data are described for porous SiC layers grown on the surface of porous silicon (P-Si) wires. Raman scattering spectroscopy, energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM) were emplo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7dfcb08d12a0d5cd3a6b9ad781295a7
https://doi.org/10.1016/j.mejo.2007.07.069
https://doi.org/10.1016/j.mejo.2007.07.069
Autor:
M. Estrada Cueto, Tetyana Torchynska, G. R.Paredes Rubio, Georgiy Polupan, A. Vivas Hernandez, S. Jiménez Sandoval, R. Peña Sierra
Publikováno v:
Thin Solid Films. 492:327-331
Photoluminescence and Raman scattering investigations were performed on porous silicon (PSi) films prepared using different electrochemical etching regimes with the aim of obtaining PSi layers with a variation of Si nanocrystallite sizes. Then Schott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faa7a9a0205668eb53e0141c0ca8a7af
https://doi.org/10.1016/j.tsf.2005.06.031
https://doi.org/10.1016/j.tsf.2005.06.031
Autor:
M. Estrada Cueto, Tetyana Torchynska, A. Vivas Hernandez, R. Peña Sierra, Georgiy Polupan, G. R.Paredes Rubio, S. Jiménez Sandoval
Publikováno v:
physica status solidi (c). 2:3019-3022
Photoluminescence (PL), Raman scattering and atomic force microscopy (AFM) investigations have been done for porous silicon (PSi) in as-prepared state. The Schottky barrier to porous silicon layer and ohmic electrical contact to p-type Si substrate h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33cb42e879ef868071fffcfd8b66555
https://doi.org/10.1002/pssc.200460758
https://doi.org/10.1002/pssc.200460758