Zobrazeno 1 - 10 of 11 pro vyhledávání: '"G. R. Landis"'
1
Ohmic Contacts on p-Type SiC Using Al/C Films
Autor: G. R. Landis, William C. Mitchel, Wei Jie Lu, W. E. Collins
Publikováno v: Materials Science Forum. :899-902
Al based alloys, such as Ti/Al, are commonly used for ohmic contacts on p-type SiC. The interfacial structures of a metal alloy film on SiC are very complicated after annealing. Al is considered as the key element responsible for forming ohmic contac
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::adf9c6f22fd749721d7c8b982f3ed166
https://doi.org/10.4028/www.scientific.net/msf.527-529.899
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2
Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures
Autor: William D. Mitchell, S. Elhamri, R. Berney, G. R. Landis, William C. Mitchel
Publikováno v: Journal of Electronic Materials. 35:599-604
Magnetoresistance measurements were performed on van der Pauw shaped AlGaN/GaN heterostructures grown on either sapphire or silicon carbide. These measurements revealed the presence of Shubnikov-de Haas oscillations. However, the amplitude of the osc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d22e084bd5a4ebee14909efa0bdb252c
https://doi.org/10.1007/s11664-006-0106-0
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3
Ohmic contact properties of Ni/C film on 4H-SiC
Autor: Weijie Lu, G. R. Landis, William C. Mitchel, T. R. Crenshaw, W. Eugene Collins
Publikováno v: Solid-State Electronics. 47:2001-2010
Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial layer between Ni film and SiC is used to improve ohmic contact properties. The contact properties of Ni/C/SiC structure with various thickness of carbon film,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ddce7238bfd32fca83cb559e09da2839
https://doi.org/10.1016/s0038-1101(03)00165-5
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4
Electrical contact behavior of Ni/C60/4H–SiC structures
Autor: T. R. Crenshaw, Weijie Lu, William C. Mitchel, W. Eugene Collins, G. R. Landis
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1510-1514
A C60 interfacial layer between a Ni film and SiC improves the Ohmic contact properties significantly. The C60 film is deposited by the Langmuir–Blodgett method prior to the Ni film deposition on SiC using dc sputtering. High quality Ohmic contacts
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::629171308ef5957506cf6e8f9c616118
https://doi.org/10.1116/1.1572167
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5
Catalytic graphitization and Ohmic contact formation on 4H–SiC
Autor: William C. Mitchel, Weijie Lu, T. R. Crenshaw, W. Eugene Collins, G. R. Landis
Publikováno v: Journal of Applied Physics. 93:5397-5403
Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts are formed on Ni/C, Co/C, Cr/C, and NiCr/C films on 4H–SiC w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1024a959a6ad8166d93301872ce12b12
https://doi.org/10.1063/1.1562737
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6
Carbon structural transitions and ohmic contacts on 4H-SiC
Autor: William C. Mitchel, W. Eugene Collins, G. R. Landis, Weijie Lu, Candis A. Thornton
Publikováno v: Journal of Electronic Materials. 32:426-431
The structural properties of sputtered carbon films on SiC are investigated using X-ray photoelectron spectroscopy (XPS) and Raman scattering. The as-deposited films are amorphous with an sp2/sp3 ratio of 1. The sp2 carbon structures gradually increa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ad8688ae3ca6a3f96472183ac5e26e6
https://doi.org/10.1007/s11664-003-0172-5
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8
Investigation of photorefractive nonlinear optical properties of iron-doped lithium niobate in bulk and fiber configurations
Autor: Dean R. Evans, T. P. Pottenger, Shekhar Guha, Mohammad A. Saleh, Timothy J. Bunning, G. R. Landis, Sergey Basun
Publikováno v: SPIE Proceedings.
In this work we present the experimental results of contradirectional two-beam coupling in a bulk crystal and single crystal fibers of iron-doped lithium niobate. Results of a reduction of the grating writing instability, a comparison of the two-beam
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01b6ea99113dc6fdbec78bf48b5979c2
https://doi.org/10.1117/12.452726
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9
Compensation mechanism in high purity semi-insulating 4H-SiC
Autor: H. E. Smith, S.R. Smith, William D. Mitchell, G. R. Landis, W. C. Mitchel, Evan R. Glaser
Publikováno v: Journal of Applied Physics. 101:053716
A study of deep levels in high purity semi-insulating 4H-SiC has been made using temperature dependent Hall effect (TDH), thermal and optical admittance spectroscopies, and secondary ion mass spectrometry (SIMS). Thermal activation energies from TDH
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89010da29ab47c134879ab336aea04df
https://doi.org/10.1063/1.2437677
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10
Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC
Autor: R. Berney, Adam William Saxler, W. D. Mitchell, W. C. Mitchel, Said Elhamri, G. R. Landis
Publikováno v: Applied Physics Letters. 90:042112
Transport measurements were used to characterize AlGaN∕AlN∕GaN∕SiC. While the carrier concentration, n=9.2×1012cm−2, remained relatively unchanged from 300 down to 1.2K, the mobility increased from 2100 to over 3×104cm2∕Vs. Shubnikov-de H
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7cde298e145f085c4c8f0112534f1c08
https://doi.org/10.1063/1.2432300
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