Zobrazeno 1 - 10
of 798
pro vyhledávání: '"G. R. Anstis"'
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f975ba090838f7c5068caba441e3483
https://doi.org/10.1201/9781003069614-3
https://doi.org/10.1201/9781003069614-3
Publikováno v:
ResearcherID
Images of defects at interfaces of strained Si1 - x Gex epilayers grown on bulk Si (001) substrates have been formed using the electron channelling contrast technique. The channelling images were obtained from bulk specimens using a highly efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07d1cea9ff1ea8195c72a0085750f5b6
https://doi.org/10.1080/01418619308219357
https://doi.org/10.1080/01418619308219357
Autor:
G. R. Anstis, D. J. H. Cockayne
Limitations on the calculation of high-resolution detail in electron microscope images of defects in crystals are discussed and it is shown how images of crystals with arbitrary strain can be calculated by means of a reinterpretation of the normal dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa986af6aa0cca5c395c645fb97a99fe
https://doi.org/10.1107/s056773947900125x
https://doi.org/10.1107/s056773947900125x
Autor:
G. R. Anstis
Publikováno v:
Philosophical Magazine B. 81:1687-1699
Computer simulations are utilized to show how to use a transmission electron microscope which has an objective lens with an adjustable coefficient of spherical aberration to determine the three spatial coordinates of a single heavy atom embedded in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e01db3d552960966e8520a9dc312fb2d
https://doi.org/10.1080/13642810108223112
https://doi.org/10.1080/13642810108223112
Autor:
G. R. Anstis
Publikováno v:
Microscopy and Microanalysis. 5:210-211
To have an understanding of many imaging and diffraction effects relating to high-energy electrons it is essential to take into account the vibrations of the atoms of the solid being examined. Einstein's model of the vibrations takes the atoms to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b46e6f57de8b0d99a648243f5584e2b9
https://doi.org/10.1017/s1431927600014379
https://doi.org/10.1017/s1431927600014379
Autor:
G. R. Anstis
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:586-587
Weak—beam dark—field images of stacking faults in silicon vary in an interesting way as the angle of inclination of a fault to the beam changes. It is observed that the contrast of images formed with beam +g varies with angle of inclination at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c3e39b7734bc4a64a24808ca2a23427
https://doi.org/10.1017/s0424820100181695
https://doi.org/10.1017/s0424820100181695
Autor:
Jiang, Chunlei1,2 (AUTHOR) cl.jiang@siat.ac.cn, Yan, Jiaxiao1,3 (AUTHOR), Wang, Doufeng1,4 (AUTHOR), Yan, Kunye1,3 (AUTHOR), Shi, Lei1 (AUTHOR), Zheng, Yongping1 (AUTHOR), Xie, Chengde1,2 (AUTHOR), Cheng, Hui‐Ming1 (AUTHOR), Tang, Yongbing1,4 (AUTHOR) tangyb@siat.ac.cn
Publikováno v:
Angewandte Chemie. 12/18/2023, Vol. 135 Issue 51, p1-8. 8p.
Autor:
Tian, Yun, Liu, Jianing, Xue, Mingming, Zhang, Dongyao, Wang, Yuxin, Geng, Keping, Dong, Yanchun, Yang, Yong
Publikováno v:
International Journal of Minerals, Metallurgy & Materials; Dec2024, Vol. 31 Issue 12, p2692-2705, 14p
Publikováno v:
Journal of Nano- & Electronic Physics; 2024, Vol. 16 Issue 5, p1-7, 7p
Publikováno v:
Philosophical Magazine A. 48:139-153
Abstract Dissociated dislocations in (111) foils of silicon have been imaged in the forbidden reflection of type ⅓(422). Largo contrast effects are observed at stacking faults, and thickness fringes corresponding to changes of thickness of a repeat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8467ecaa024212c2628b5632386fa15
https://doi.org/10.1080/01418618308234892
https://doi.org/10.1080/01418618308234892