Zobrazeno 1 - 10
of 60
pro vyhledávání: '"G. Prudon"'
Publikováno v:
Surface and Interface Analysis. 45:376-380
The isotopic comparative method (ICM) has been used to measure the concentrations and relative ion yields of Si+, Ge+ (Si-, Ge-) in SiGe alloys ranging almost from pure silicon to pure germanium by secondary-ion mass spectrometry under Ar+ bombardmen
Publikováno v:
Surface and Interface Analysis. 45:369-372
With the isotopic comparative method (ICM), we determined the ion yields of B+, O+, Si+, B−, O−, and Si− versus oxygen concentration in silicon under Ar+ bombardment. By multi-energy implantation, we obtained samples containing a near-uniform l
Autor:
J.C. Dupuy, Reinhard Kögler, G. Prudon, Angela Perrat-Mabilon, Brice Gautier, Shavkat Akhmadaliev, C. Dubois, Christophe Peaucelle
Publikováno v:
Surface and Interface Analysis. 43:137-140
Specific samples containing 18 O and 16 O are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. 18 O and 16 O are used to implement an Isotopic Comparative Method (ICM) which
Autor:
J.C. Dupuy, G. Prudon, Thierry Kociniewski, C. Dubois, Bruno Canut, Brice Gautier, Yann Le Gall
Publikováno v:
Surface and Interface Analysis. 43:36-40
This work extends the Isotopic Comparative Method, which has been previously introduced with the aim of correcting matrix effects, to quantify high concentrations of boron in silicon up to 40 at.% by SIMS technique. It requires a specific sample cont
Publikováno v:
Applied Surface Science. 253:2662-2670
Surface roughening of boron δ -doped Si samples under low energy (0.5 keV/ O 2 + , 44 ° and 54 ° , and 1.0 keV/ O 2 + , 48 ° ) O 2 + bombardment at oblique incidence with and without oxygen flooding was studied with atomic force microscopy (AFM)
Publikováno v:
Applied Surface Science. 252:6478-6481
In this paper, the deconvolution of SIMS profiles analysed at very low primary energy (0.5 keV/O 2 + ) is addressed. The depth resolution function (DRF) of the SIMS analysis in presence of roughness is established and a deconvolution procedure is imp
Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon
Publikováno v:
Applied Surface Science. :678-683
The oxygen ion-beam-induced surface roughening observed during SIMS depth profiling of both Si(1 0 0) and 10° disoriented Si(1 0 0) surface without flooding has been studied by atomic force microscopy (AFM). Facets have been created at the crater bo
Publikováno v:
Applied Surface Science. :136-140
Atomic force microscopy (AFM) is used in tapping and contact mode in order to study the roughness created in the crater bottom during secondary ions mass spectrometry (SIMS) analysis in silicon, using O2+ primary ions without oxygen flooding. A chara
Publikováno v:
Journal of Crystal Growth. 245:1-8
Measuring depth resolution in secondary ion mass spectrometry is of crucial importance. In the case of boron in silicon, the depth resolution is frequently inspected by profiling molecular beam epitaxy (MBE) grown multi-delta-like structures. Recentl
Publikováno v:
Surface and Interface Analysis. 26:974-983
In this paper, the problem of the deconvolution of SIMS depth profiles is addressed. In particular, the hypotheses that are necessary for the deconvolution to be possible (in the actual state of the art) in the case of the SIMS signal are reviewed. T