Zobrazeno 1 - 10
of 26
pro vyhledávání: '"G. Picun"'
Autor:
W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gelineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville
Publikováno v:
2022 International Conference on IC Design and Technology (ICICDT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8f2dd022be86323d12e49fc3a08218
https://doi.org/10.1109/icicdt56182.2022.9933092
https://doi.org/10.1109/icicdt56182.2022.9933092
Publikováno v:
2007 IEEE International SOI Conference.
In this paper we will present two applications: high temperature electronics where SOI has a monopole for temperature between 200degC and 300degC and RF electronics where SOI has interesting performances compare to bulk. SOI is an enabling technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::313c92dc97aa53c9090d7c5c0ad37ebb
https://doi.org/10.1109/soi.2007.4357828
https://doi.org/10.1109/soi.2007.4357828
Publikováno v:
Advanced Microsystems for Automotive Applications 2006 ISBN: 3540334092
This paper presents a High Temperature Floating Gate MOSFET Driver ASIC for on-the-engine Injector Control. The circuit was specifically designed for this harsh environment and has been realized using Silicon-on-Insulator (SOI) Technology. The first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d16bc42c6d581d95a3c7da38c0970b
https://doi.org/10.1007/3-540-33410-6_18
https://doi.org/10.1007/3-540-33410-6_18
Publikováno v:
Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005..
This paper discusses the power saving of an LC-VCO designed on high-resistivity SOI substrates (/spl rho/ > 1000/spl Omega//spl middot/cm). It demonstrates the drastic improvement in the varactors and inductors quality factor on these substrates. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c57564e685d80e6c7d96d34ea9439418
https://doi.org/10.1109/esscir.2005.1541643
https://doi.org/10.1109/esscir.2005.1541643
Intelligent SOI CMOS integrated circuits and sensors for heterogeneous environments and applications
Autor:
Laurent Vancaillie, Christian Renaux, J. Laconte, Jean-Pierre Raskin, G. Picun, Stéphane Adriaensen, Aryan Afzalian, David Levacq, Laurent Demeûs, P. Delatte, Denis Flandre, Vincent Dessard
Publikováno v:
Scopus-Elsevier
In this paper, we demonstrate how a simple fully-depleted SOI CMOS process can be adapted to provide a wide range of performance compatible with the realization of heterogeneous micropower, high-temperature or RF micro-systems which involve the integ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f73e5415838c455a81244142c44ea16
https://doi.org/10.1109/icsens.2002.1037327
https://doi.org/10.1109/icsens.2002.1037327
Publikováno v:
Advanced Microsystems for Automotive Applications Yearbook 2002 ISBN: 9783642621147
This paper will focus on the use of SOI (Silicon-On-lnsulator) technology for automotive applications. SOI has been recognized since a long time for its advantages for High Temperature electronics, low-power electronics and since some years, for MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2711b8c026c2816659a6e0b4f80794bf
https://doi.org/10.1007/978-3-642-18213-6_36
https://doi.org/10.1007/978-3-642-18213-6_36
Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems
Autor:
D. Spôte, A. Akheyar, Pascal Simon, Bertrand Parvais, Denis Flandre, I. Martinez, Amaury Nève, Stéphane Adriaensen, Jean-Pierre Raskin, Morin Dehan, E. Rauly, Laurent Demeûs, P. Delatte, B Katschmarskyj, Pierre Loumaye, J. Laconte, M Zitout, Benjamin Iniguez, Vincent Dessard, André Crahay, Christian Renaux, D. Vanhoenacker, G. Picun
Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promisin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f3dc6b492f99e5cdc1abea315f93c0b
https://hdl.handle.net/20.500.14017/49e355e2-bdb6-43cb-844d-80b0298470d9
https://hdl.handle.net/20.500.14017/49e355e2-bdb6-43cb-844d-80b0298470d9
Conference
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Akademický článek
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