Zobrazeno 1 - 10
of 80
pro vyhledávání: '"G. Petö"'
Publikováno v:
The European Physical Journal Applied Physics. 27:85-88
Self-assembled β-FeSi 2 quantum (QD) dots were grown on n-type Si and investigated in this work. Secondary electron images show the shape and distribution of the quantum dots depends on the temperature and thickness of the Fe deposition. Electrical
Autor:
G Petö, Janusz Kanski
Publikováno v:
Solid State Communications. 121:585-589
Si(100) crystals were ion implanted by 74 Ge + to synthesize Si 1− x Ge x alloys with x =0.5 and 5.0%. The as-implanted layers were identified as amorphous by means of electron diffraction, and the valence band density of states was measured by UV-
Autor:
Janusz Kanski, G. Petö
Publikováno v:
Solid State Communications. 96:919-923
An amorphous Si layer was formed on a Si (1 0 0) surface by P+ implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evap
Publikováno v:
Journal of Non-Crystalline Solids. 125:258-263
Structural and electronic properties of Sb implantation induced amorphous Ge were investigated. It was found that the basic properties of this amorphous material differ drastically from those of amorphous Ge obtained by evaporation. The structure of
Autor:
G. Petö, R. Pepelnik
Publikováno v:
Nuclear Science and Engineering. 106:219-227
The present status of various deuterium-tritium (D-T) neutron sources is given, including the prospects for improvements. By upgrading a Rotating Target Neutron Source II-type neutron generator, a ...
Autor:
G. Petö, Janusz Kanski
Publikováno v:
Solid State Communications. 51:747-750
The electron structure of amorphous and crystallized Fe 82 B 12 Si 6 has been investigated by means of UPS, XPS and EELS, with the aim to establish spectral features distinguishing the two phases. Our results show distinct redistribution in the valen
Publikováno v:
Physics Letters A. 124:510-514
Ge amorphised by Sb + implantation has been investigated by means of UV photoemission. Our results differ significantly from earlier data on amorphous Ge. It is suggested that this implantation produces a new kind of amorphous state, characterized by
Publikováno v:
Thin Solid Films. 77:359-366
Quantitative results concerning the evolution of particle size, coverage, edge-to-edge separation and shape for ultrathin gold films on glass substrates are reported. These structural features of the particles deposited in ultrahigh vacuum were deter
Publikováno v:
Thin Solid Films. 36:217-222
Autor:
Janusz Kanski, G. Petö
Publikováno v:
Journal of Non-Crystalline Solids. 90:131-134
Density of states of a-Ge induced by 74+As implantation was measured by means of the photoelectron energy distribution. The result is a very structureless curve. The density of states is very low at 0–5 eV., but larger at 5–9 eV energy regions of