Zobrazeno 1 - 10
of 57
pro vyhledávání: '"G. Patrat"'
Publikováno v:
Diamond and Related Materials. 11:1332-1336
The erbium carbide formation on homoepitaxial C(100) diamond thin films has been studied by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXD) and Raman spectroscopy. Diamond fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1e3a68b6829aead1027a3d30442042
https://doi.org/10.1016/s0925-9635(01)00652-5
https://doi.org/10.1016/s0925-9635(01)00652-5
Autor:
A. Al khawwam, G. Patrat, P. Dhamelincourt, P. Goudmand, O. Dessaux, A. El Achari, charafeddine Jama
Publikováno v:
Thin Solid Films. 408:15-25
Carbon nitride layers were deposited on unheated Si(100) substrates by CO 2 IR laser ablation of graphite in a remote nitrogen plasma atmosphere. The diagnostic techniques Fourier-transform infrared (FTIR) and Raman spectroscopy, scanning electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6258c5997f74f17b5e559ac2f42f6c2b
https://doi.org/10.1016/s0040-6090(02)00070-6
https://doi.org/10.1016/s0040-6090(02)00070-6
Autor:
Hélène Fischer, D. Raoux, M.C. Saint-Lager, Stéphane Andrieu, G. Patrat, M. Piecuch, A. Déchelette, Jean-Marc Tonnerre
Publikováno v:
Physical Review B. 60:6623-6635
X-ray-diffraction measurements have been performed on ${\mathrm{Fe}}_{x}{\mathrm{Mn}}_{1\ensuremath{-}x}(001)$ thin films strained in ${\mathrm{I}\mathrm{r}/\mathrm{F}\mathrm{e}}_{x}{\mathrm{Mn}}_{1\ensuremath{-}x}/\mathrm{Ir}(001)$ sandwiches and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4afc04a17be3185b4c0bd6b31b7f43dd
https://doi.org/10.1103/physrevb.60.6623
https://doi.org/10.1103/physrevb.60.6623
Publikováno v:
Physical Review B. 59:5950-5959
Single-crystalline $R{\mathrm{Fe}}_{2}(110)$ compounds $(R=\mathrm{Y},$ Sm, Gd, Tb, ${\mathrm{Dy}}_{0.7}{\mathrm{Tb}}_{0.3},$ Dy, Er, and Lu) have been grown by molecular-beam epitaxy. Compared to the bulk compounds, the thin films exhibit modificati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4095b0979c0d4e36944ffeb47f2e5ae8
https://doi.org/10.1103/physrevb.59.5950
https://doi.org/10.1103/physrevb.59.5950
Publikováno v:
Acta Materialia. 45:257-272
The L1 0 ordering of thin epitaxial films having a (001) surface normal subject to elastic constraints imposed by a similarly oriented substrate has been investigated both experimentally and theoretically. Thin AuNi films grown by MBE at room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7417b9d9b82e67e1d9c50876b626d6ec
https://doi.org/10.1016/s1359-6454(96)00149-8
https://doi.org/10.1016/s1359-6454(96)00149-8
Publikováno v:
Journal of Applied Physics. 80:5727-5735
The deposition of MgO on the Fe(001) surface at room temperature and at elevated temperatures has been carried out using molecular beam epitaxy (MBE). MgO is observed to grow epitaxially with a 45° rotation between the Fe(001) and MgO(001) unit cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::614d760e49b87d269bdec9b73230b076
https://doi.org/10.1063/1.363626
https://doi.org/10.1063/1.363626
Publikováno v:
Acta Materialia. 44:4417-4431
Epitaxial Au 1− x Ni x solid solutions with x ranging from 0.2 to 0.6 have been grown by MBE on Au(001) at room temperature. Their relaxation has been studied in-situ by RHEED and ex-situ by GIXD, TEM and HREM. All of the films studied relax via th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d452f5461937e10c4cf98f8c6978dc1
https://doi.org/10.1016/1359-6454(96)00070-5
https://doi.org/10.1016/1359-6454(96)00070-5
Autor:
G. Patrat, T.A. Nguyen Tan, M. Azizan, Y. Ijdiyaou, M. Brunel, E.L. Ameziane, Luc Ortega, K. Hafidi
Publikováno v:
Thin Solid Films. 266:224-228
The atomic structure of tantalum (Ta)-amorphous silicon (a-Si) interfaces has been investigated using a-Si/Ta/a-Si multilayers, sputtered on unheated crystalline silicon (c-Si) substrates without breaking the vacuum. The back and the top Si layers we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9022b210e6e6324aa1fbab30c1a8a043
https://doi.org/10.1016/0040-6090(95)06643-8
https://doi.org/10.1016/0040-6090(95)06643-8
Publikováno v:
Sensors and Actuators B: Chemical. 6:299-303
The dip-coating process, based on sol-gel science, is proposed to deposit thin films of ion-sensitive membrane. The different steps of the process adapted for an Na super ionic conductor (NASICON) are described and physical characterizations of thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd9990d8285af8bf479dda189083d46
https://doi.org/10.1016/0925-4005(92)80074-8
https://doi.org/10.1016/0925-4005(92)80074-8
Publikováno v:
Solid State Communications. 79:923-928
X-ray fluorescence and diffraction has been performed on porous silicon samples at incidences near the critical angle for total external reflection. By fitting the X-ray fluorescence intensity as a function of the incidence angle, density and density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fcfd0171800146200106ccbddf0b60f
https://doi.org/10.1016/0038-1098(91)90444-z
https://doi.org/10.1016/0038-1098(91)90444-z