Zobrazeno 1 - 2
of 2
pro vyhledávání: '"G. P. Schmuck"'
Autor:
R. J. Wehrer, R. G. Mahorter, F. Newman, S. Murray, S. D. Link, C.S. Murray, B. Wernsman, R. R. Siergiej, R. W. Schultz, D. Taylor, T. Rahmlow, R. L. Messham, G. P. Schmuck, M. N. Palmisiano, D.M. DePoy
Publikováno v:
IEEE Transactions on Electron Devices. 51:512-515
An InGaAs monolithic interconnected module (MIM) using reflective spectral control has been fabricated and measured in a thermophotovoltaic radiator/module system (radiator, optical cavity, and thermophotovoltaic module). Results showed that at a rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeada6bc418c51fa6a7280a9225d564c
https://doi.org/10.1109/ted.2003.823247
https://doi.org/10.1109/ted.2003.823247
Autor:
B. Wernsman, D. M. Wilt, G. P. Schmuck, R. J. Wehrer, I. Ju, C. B. Geller, R. R. Siergiej, R. W. Smith
Publikováno v:
AIP Conference Proceedings.
0.6 eV InGaAs/InPAs double heterostructure n/p/n tunnel junction monolithic interconnected modules (TJ‐MIMs) having p‐type bases doped uniformly at 2×1017 cm−3 and inhomogeneously graded from 4×1016 cm−3 to 4×1017 cm−3 (10:1 doping ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7124229862aea0d0cdc5b13bcd3d03fa
https://doi.org/10.1063/1.1539404
https://doi.org/10.1063/1.1539404