Výsledky vyhledávání - "G. P. Kolomoets"

Parameter determination of the polysilicon emitter interface for bipolar transistor

Autor: G. P. Kolomoets, M. M. Tkachenko, V. N. Nazarenko

Publikováno v: SPIE Proceedings.

The electrical parameters of polysilicon-contacted emitters are investigated. The emitter-base junction C-2-V plots demonstrated an anomaly because of charge occurrence at the polySi-monoSi interface. A critical analysis of well-known methods for emi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f6af583a027dac4dae386ff696076e8
https://doi.org/10.1117/12.131023

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Polycrystalline resistors with current-induced tuning of the electrical parameters

Autor: G. P. Kolomoets, Nickolay G. Melentyev, M. M. Tkachenko

Publikováno v: SPIE Proceedings.

Results of experimental investigation of the current-induced resistance change in polycrystalline silicon films (PSFs) with doping concentrations of 2 (DOT) 1017 cm-3 -2 (DOT) 1020 cm-3 are presented. For the concentration of 1 (DOT) 1019 cm-3 and 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::afa4f1767de5acb65e6ff3f4cc8f763c
https://doi.org/10.1117/12.131024

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