Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Autor: Suresh Sundaram, Konstantinos Pantzas, Gilles Patriarche, Abdallah Ougazzaden, Jimmy Hester, Jean-Paul Salvestrini, Tarik Moudakir, G. Orsal, Y. El Gmili, Ali Ahaitouf

Publikováno v: Acta Materialia. 61:6587-6596

We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a struct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac0ca35270968ea1c121e29e4a91a11f
https://doi.org/10.1016/j.actamat.2013.07.041

Study of polycrystalline CuGaSe 2 thin films deposited by MOCVD onto ZnO substrates

Autor: M.C Artaud, S. Duchemin, N. Romain, Frédérick Mailly, Simon A. Rushworth, G. Orsal

Publikováno v: Thin Solid Films. :135-139

Metalorganic chemical vapour deposition (MOCVD) from three organometallic precursors has been applied to the growth of CuGaSe 2 . Polycrystalline thin films were obtained by co-deposition onto ZnO-coated glass substrates. Structural, morphological, o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c5f838f453ccaf17ba2676da6048621
https://doi.org/10.1016/s0040-6090(99)00786-5

Characterization of CuGaSe/sub 2/ thin films grown by MOCVD

Autor: N. Romain, G. Orsal, S. Duchemin, M.C Artaud

Publikováno v: IEEE Transactions on Electron Devices. 46:2098-2102

CuGaSe/sub 2/ thin films have been grown by metalorganic chemical vapor deposition (MOCVD), from three organometallic precursors. Samples of about 1-2 /spl mu/m thick are codeposited onto Pyrex and Mo-coated soda lime glass. A large range of composit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb25ac70c12be65969af63479a4e68d5
https://doi.org/10.1109/16.792003

Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

Autor: Tarik Moudakir, V. E. Sandana, F. Hosseini Teherani, Simon Gautier, Konstantinos Pantzas, Manijeh Razeghi, Gilles Patriarche, Philippe Bove, Abdallah Ougazzaden, G. Orsal, Ryan McClintock, D. J. Rogers

Publikováno v: Oxide-based Materials and Devices IV.

InGaN-based p-i-n structures were transferred from sapphire to soda-lime glass substrates using two approaches: (1) laser-lift-off (LLO) and thermo-metallic bonding and (2) chemical lift-off (LLO) by means sacrificial ZnO templates and direct wafer b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ed87f65346df131a177d89c65d57f74
https://doi.org/10.1117/12.2010046

Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Autor: Christelle Pareige, Konstantinos Pantzas, G. Orsal, Abdallah Ougazzaden, Tarik Moudakir, Christophe Longeaud, Paul L. Voss, Vanessa Gorge, Simon Gautier, Z. Djebbour, Anne Migan-Dubois

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩
Applied Physics Letters, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩
Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113

LGEP 2011 ID = 751; International audience; We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect rep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b8cb3341e528ba62a9994eb193a2b8e
https://hal-supelec.archives-ouvertes.fr/hal-00710730