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pro vyhledávání: '"G. Ooshima"'
Autor:
T. Kawanoue, Hideaki Hirabayashi, H. Ookawa, Gaku Minamihaba, T. Shimizu, K. Suguro, H. Tamura, T. Idaka, G. Ooshima, Yoshiaki Shimooka, T. Obara, N. Sakurai, Tadashi Iijima, H. Egawa, M. Koyama, T. Kubota
Publikováno v:
Japanese Journal of Applied Physics. 35:1107
A double-level Cu interconnection process for lower submicron generation ULSIs was developed. Cu interconnects were successfully formed by Cu/WSiN sputtering, XeCl excimer laser annealing and Cu/WSiN chemical mechanical polishing. The composition of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6691ee845ec9b8d816a593dd96c012d1
https://doi.org/10.1143/jjap.35.1107
https://doi.org/10.1143/jjap.35.1107
