Zobrazeno 1 - 10
of 221
pro vyhledávání: '"G. Oelgart"'
Publikováno v:
Journal of Crystal Growth. 195:694-699
We have investigated ordering behaviour in MOVPE-grown GaInAsP lattice-matched to GaAs using luminescence and diffraction methods. Our observations indicate that the occurrence of ordering variants depends not only on the growth conditions and the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9f47b9d9c8c9e720d73de3a1de275d
https://doi.org/10.1016/s0022-0248(98)00576-4
https://doi.org/10.1016/s0022-0248(98)00576-4
Publikováno v:
Journal of Applied Physics. 84:1588-1594
Photoluminescence of Ga0.54In0.46As0.12P0.88 layers grown by metalorganic vapor phase epitaxy on differently oriented GaAs substrates has been investigated. Valence-band splitting due to symmetry breaking in ordered quaternary alloys was demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51dbac25e2d8a557623307a349be161
https://doi.org/10.1063/1.368228
https://doi.org/10.1063/1.368228
Autor:
R. Pässler, G. Oelgart
Publikováno v:
Journal of Applied Physics. 82:2611-2616
We have performed a detailed numerical reinvestigation of the photoluminescence peak position data given by G. Oelgart et al. [J. Appl. Phys. 74, 2742 (1993)] for the ground state heavy-and light-hole excitons in a high quality molecular beam epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb06fd017728a662d48dc4d5e50772bb
https://doi.org/10.1063/1.366098
https://doi.org/10.1063/1.366098
Publikováno v:
Scopus-Elsevier
Copyright (c) 1997 Elsevier Science S.A. All rights reserved. The compensation ratio in high-purity n-type GaAs layers grown by metal−organic vapour phase epitaxy was determined from low-temperature photoluminescence measurements using the intensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5adb734f89dd8b470ae6ea68e67357a0
https://doi.org/10.1016/s0921-5107(96)01770-9
https://doi.org/10.1016/s0921-5107(96)01770-9
Publikováno v:
Semiconductor Science and Technology. 10:835-840
In cathodoluminescence spectra of high-quality GaAs/AlxGa1-xAs multi quantum wells (well thicknesses and barrier composition in the range 2.7 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95da41ed75ac88a12a81e3666813784f
https://doi.org/10.1088/0268-1242/10/6/015
https://doi.org/10.1088/0268-1242/10/6/015
Publikováno v:
Journal of Applied Physics. 76:342-346
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion tak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e9ae394ad85b1a9a00b6d942f750b9
https://doi.org/10.1063/1.357151
https://doi.org/10.1063/1.357151
Autor:
Jean-Marc Bonard, G. Oelgart, F. Morier-Genoud, Daniel Araujo, Jean-Daniel Ganière, F. K. Reinhart
Publikováno v:
Materials Science and Engineering: B. 24:124-129
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56297d40e30dd77b6afb2a8725d0d689
https://doi.org/10.1016/0921-5107(94)90312-3
https://doi.org/10.1016/0921-5107(94)90312-3
Experimental and theoretical study of excitonic transition energies in GaAs/AlxGa1−xAs quantum wells
Autor:
F. K. Reinhart, Denis Martin, F. Morier-Genaud, B. Orschel, L. C. Andreani, H. Rhan, G. Oelgart, M. Proctor
Publikováno v:
Physical Review B. 49:10456-10465
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf78bc63c71ca3233142ac85f9a58a5
https://doi.org/10.1103/physrevb.49.10456
https://doi.org/10.1103/physrevb.49.10456
Publikováno v:
Semiconductor Science and Technology. 8:1966-1972
We have studied unintentionally and deliberately Si- or Mg-doped indirect-gap AlxGa1-xAs (0.38
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c9922c6ec540062ba840fedcdb61db
https://doi.org/10.1088/0268-1242/8/11/005
https://doi.org/10.1088/0268-1242/8/11/005
Publikováno v:
Journal of Applied Physics. 74:2742-2747
The photoluminescence (PL) peak positions of the ground state heavy and light‐hole excitons on high‐quality Molecular Beam Epitaxy grown GaAs/AlxGa1−xAs (x=0.3 and 1) multiquantum‐well structures have been experimentally determined in the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ee435a6df3ed58d66f23e480bdb8cd
https://doi.org/10.1063/1.354674
https://doi.org/10.1063/1.354674