Zobrazeno 1 - 10
of 27
pro vyhledávání: '"G. O. Munns"'
Publikováno v:
Journal of Crystal Growth. 164:476-484
Growth of highly doped p-type InGaAs is required for low contact resistivity demanded by high performance microwave devices. Increasing the doping level in the base of HBTs is known to be reflected in better unity power gain cut-off frequency. Low te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59175115101b9b39c05dd208b7ff01b2
https://doi.org/10.1016/0022-0248(95)01076-9
https://doi.org/10.1016/0022-0248(95)01076-9
Publikováno v:
Journal of Crystal Growth. 164:454-459
CBE is used to co-integrate InP-based heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) for the first time to reduce the complexity of conventional digital circuit technology. The integrated transistors have maximum dc an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ee3c3efab16c4a9754758a3f7250844
https://doi.org/10.1016/0022-0248(95)01078-5
https://doi.org/10.1016/0022-0248(95)01078-5
Publikováno v:
Journal of Crystal Growth. 136:50-55
A systematic growth study of InGaAs/AIA5/InGaAsP resonant tunneling hot electron transistors (RHETs) was performed using chemical beam epitaxy (CBE). The resonant tunneling hot electron transistors studied consist of a highly strained AIAs/1n075Ga525
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca4ad3ca4c51401d51f801d353aa9a2
https://doi.org/10.1016/0022-0248(94)90382-4
https://doi.org/10.1016/0022-0248(94)90382-4
Autor:
George I. Haddad, Pallab Bhattacharya, G. O. Munns, W.L. Chen, Marc E. Sherwin, L. Davis, D. Knightly
Publikováno v:
Journal of Crystal Growth. 136:166-172
It has generally been recognized that sources of the highest purity facilitate growth of loP and InAlAs with excellent optical and electrical characteristics. The mobility, photoluminescence linewidths, X-ray linewidths, impurity levels, and ultimate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e026d73081cb2b88fd3aca5252e62f4
https://doi.org/10.1016/0022-0248(94)90403-0
https://doi.org/10.1016/0022-0248(94)90403-0
Publikováno v:
IEEE Transactions on Electron Devices. 41:155-161
InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In/sub 0.75/Ga/sub 0.25/As/AlAs resonant tunneling dou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0145a7d214c7a28e43caed746ad05b5
https://doi.org/10.1109/16.277385
https://doi.org/10.1109/16.277385
Autor:
Marc E. Sherwin, W.L. Chen, George I. Haddad, Youngwoo Kwon, G. O. Munns, T. Brock, Dimitris Pavlidis
Publikováno v:
Journal of Crystal Growth. 127:25-28
The InAlAs/InGaAs high electron mobility transistor offers excellent high frequency, low noise operation for amplifiers. While this material system has been grown primarily by conventional MBE, other growth techniques have been examined for improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e835b6ef218e9f24c774b0699bc78dc
https://doi.org/10.1016/0022-0248(93)90570-m
https://doi.org/10.1016/0022-0248(93)90570-m
Publikováno v:
Journal of Crystal Growth. 127:226-229
The growth of InAlP and related compounds such as InGaP lattice matched to GaAs has attracted a great deal of interest for optoelectronic devices emitting in the range from 638 to 700 nm and for electronic devices such as the heterojunction bipolar t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d70fb878b28948197ef1c32b42e1411b
https://doi.org/10.1016/0022-0248(93)90610-9
https://doi.org/10.1016/0022-0248(93)90610-9
Publikováno v:
Journal of Crystal Growth. 120:162-166
InGaAsP has been grown by CBE at compositions of 1.1, 1.2 and 1.4 μm for the development of MQW-SCH lasers. The observed incorporation coefficients for TMI and TEG show strong temperature sensitivity while the phosphorus and arsenic incorporation be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e4aa022edcfceedd6dabc7397eee0f3
https://doi.org/10.1016/0022-0248(92)90383-t
https://doi.org/10.1016/0022-0248(92)90383-t
Autor:
George I. Haddad, G. O. Munns, Marc E. Sherwin, T. Brock, Youngwoo Kwon, Dimitris Pavlidis, Geok Ing Ng
Publikováno v:
Journal of Crystal Growth. 120:184-188
The lnAlAs/lnGaAs/InP high electron mobility transistor (HEMT) lattice matched to lnP offers excellent high frequency, low noise operation for MMICs and low-noise amplifiers. The lnP channel in the InP/InAlAs HEMT offers the advantages of improved hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::714c862dc995af401c7842dcfeaf1b42
https://doi.org/10.1016/0022-0248(92)90388-y
https://doi.org/10.1016/0022-0248(92)90388-y
Autor:
Jagadeesh Pamulapati, P. K. Bhattacharya, M. J. Ludowise, G. O. Munns, Jasprit Singh, John P. Loehr, Marc E. Sherwin, D. Nichols
Publikováno v:
IEEE Journal of Quantum Electronics. 28:1239-1242
The authors have studied, both theoretically and experimentally, the effects of biaxial strain upon the performance characteristics of broad-area InP-InGaAsP-In/sub x/Ga/sub 1-x/As (0.33 >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646ea63c474089fe703f45970364082c
https://doi.org/10.1109/3.135262
https://doi.org/10.1109/3.135262