Zobrazeno 1 - 9
of 9
pro vyhledávání: '"G. O. Kornyshov"'
Autor:
A. A. Serin, M. M. Kulagina, G. O. Kornyshov, Nikolay A. Kalyuzhnyy, A. S. Payusov, N. Yu. Gordeev, Mikhail V. Maximov, Alexey E. Zhukov, Alexey M. Nadtochiy, Sergey A. Mintairov, Yu. M. Shernyakov
Publikováno v:
Semiconductors. 55:333-340
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is show
Autor:
Mikhail V. Maximov, A. A. Serin, G. V. Voznyuk, A. S. Payusov, M. I. Mitrofanov, M. M. Kulagina, G. O. Kornyshov, N. Yu. Gordeev, V. P. Evtikhiev
Publikováno v:
Semiconductors. 54:1811-1813
We present an approach for the treatment of coupled-ridge lasers using focused ion beam (FIB) etching. We show experimentally that the FIB etching allows post-processing lateral mode tuning without deterioration of the main laser parameters.
Autor:
A. A. Serin, A. E. Zhukov, S. A. Mintairov, G. O. Kornyshov, N. A. Kalyuzhnyy, A. M. Nadtochiy, A. S. Payusov, V. N. Nevedomsky, Yu. M. Shernyakov, Mikhail V. Maximov, N. Yu. Gordeev
Publikováno v:
Technical Physics Letters. 45:163-166
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths
Autor:
S. A. Mintairov, A. S. Payusov, A. A. Serin, Alexey E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, Alexey M. Nadtochiy, Mikhail V. Maximov, Nikolay A. Kalyuzhnyy, G. O. Kornyshov
Publikováno v:
2020 International Conference Laser Optics (ICLO).
We report on lasers based on InGaAs/GaAs quantum well-dots (QWDs). The density of states in QWDs is unique and different from that of quantum well and quantum dots. Modal gain of QWD ground state transition is as high as 75 cm-1 per layer. Output pow
Autor:
S. A. Mintairov, A. S. Payusov, M. M. Kulagina, Yu. M. Shernyakov, F. I. Zubov, G. O. Kornyshov, N. A. Kalyuzhnyi, Mikhail V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov, Eduard Moiseev
Publikováno v:
Technical Physics Letters. 45:994-996
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows th
Autor:
A. A. Serin, A. E. Zhukov, Sergey A. Mintairov, N. Yu. Gordeev, Yu. M. Shernyakov, Nikolay A. Kalyuzhnyy, Mikhail V. Maximov, A. S. Payusov, G. O. Kornyshov
Publikováno v:
Journal of Physics: Conference Series. 1697:012177
We present an experimental study of the optical gain of edge-emitting lasers based on a new type of quantum-sized InGaAs active medium grown on GaAs substrates, which we refer to as quantum-well-dots (QWDs). It is shown that the single layer QWD acti
Autor:
G. O. Kornyshov, Mikhail V. Maximov, A. E. Zhukov, S. A. Mintairov, Yu. M. Shernyakov, N. Yu. Gordeev, N. A. Kalyuzhnyy, M. M. Kulagina, A. S. Payusov, A. A. Serin
Publikováno v:
Journal of Physics: Conference Series. 1410:012100
We present a study of high-power characteristics of edge-emitting lasers based on quantum well-dots (QWD) in a pulsed regime. QWD-based lasers with 2 and 5 active layers emitting at ∼1.1 μm provided maximal optical power of 39 W limited by the pul
Autor:
A. A. Kharchenko, A. S. Payusov, A. E. Zhukov, N. A. Kalyuzhnyy, A. A. Serin, Mikhail V. Maximov, G. O. Kornyshov, Yu. M. Shernyakov, S. A. Mintairov, N. Yu. Gordeev
Publikováno v:
Journal of Physics: Conference Series. 1410:012118
Having investigated narrow-ridge lasers based on a single layer of InGaAs quantum well-dots emitting at the wavelength of 1.06 μm we have shown anomalous transverse multimode lasing not observed in the broad-area lasers. The effect is shown to be ca
Autor:
N. A. Kalyuzhnyy, A. E. Zhukov, A. S. Payusov, N. Yu. Gordeev, G. O. Kornyshov, Mikhail V. Maximov, A. A. Serin, S. A. Mintairov, Yu. M. Shernyakov, Alexey M. Nadtochiy
Publikováno v:
Journal of Physics: Conference Series. 1400:066045
We present a study of characteristics of the edge-emitting lasers operating in the 0.98 μm wavelength range and based on a new type of InGaAs/GaAs active region – quantum well-dots (QWD). Utilizing the QWD active region in broadened 1.3 μm wavegu