Zobrazeno 1 - 10
of 19
pro vyhledávání: '"G. O. Kornyshov"'
Autor:
A. A. Serin, M. M. Kulagina, G. O. Kornyshov, Nikolay A. Kalyuzhnyy, A. S. Payusov, N. Yu. Gordeev, Mikhail V. Maximov, Alexey E. Zhukov, Alexey M. Nadtochiy, Sergey A. Mintairov, Yu. M. Shernyakov
Publikováno v:
Semiconductors. 55:333-340
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d3d13e394f5eefdc1f2208344315557
https://doi.org/10.1134/s1063782621030167
https://doi.org/10.1134/s1063782621030167
Autor:
Mikhail V. Maximov, A. A. Serin, G. V. Voznyuk, A. S. Payusov, M. I. Mitrofanov, M. M. Kulagina, G. O. Kornyshov, N. Yu. Gordeev, V. P. Evtikhiev
Publikováno v:
Semiconductors. 54:1811-1813
We present an approach for the treatment of coupled-ridge lasers using focused ion beam (FIB) etching. We show experimentally that the FIB etching allows post-processing lateral mode tuning without deterioration of the main laser parameters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fdbf7688246b0e32b5970470ad3263c
https://doi.org/10.1134/s1063782620140237
https://doi.org/10.1134/s1063782620140237
Autor:
A. A. Serin, A. E. Zhukov, S. A. Mintairov, G. O. Kornyshov, N. A. Kalyuzhnyy, A. M. Nadtochiy, A. S. Payusov, V. N. Nevedomsky, Yu. M. Shernyakov, Mikhail V. Maximov, N. Yu. Gordeev
Publikováno v:
Technical Physics Letters. 45:163-166
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb261466a487c2cd0f1152742d6f476f
https://doi.org/10.1134/s1063785019020305
https://doi.org/10.1134/s1063785019020305
Autor:
S. A. Mintairov, A. S. Payusov, A. A. Serin, Alexey E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, Alexey M. Nadtochiy, Mikhail V. Maximov, Nikolay A. Kalyuzhnyy, G. O. Kornyshov
Publikováno v:
2020 International Conference Laser Optics (ICLO).
We report on lasers based on InGaAs/GaAs quantum well-dots (QWDs). The density of states in QWDs is unique and different from that of quantum well and quantum dots. Modal gain of QWD ground state transition is as high as 75 cm-1 per layer. Output pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c535a0bdac6eab85e09e485e523148
https://doi.org/10.1109/iclo48556.2020.9285678
https://doi.org/10.1109/iclo48556.2020.9285678
Autor:
S. A. Mintairov, A. S. Payusov, M. M. Kulagina, Yu. M. Shernyakov, F. I. Zubov, G. O. Kornyshov, N. A. Kalyuzhnyi, Mikhail V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov, Eduard Moiseev
Publikováno v:
Technical Physics Letters. 45:994-996
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619bf2706544994881f776033a91d3e6
https://doi.org/10.1134/s1063785019100158
https://doi.org/10.1134/s1063785019100158
Autor:
A. A. Serin, A. E. Zhukov, Sergey A. Mintairov, N. Yu. Gordeev, Yu. M. Shernyakov, Nikolay A. Kalyuzhnyy, Mikhail V. Maximov, A. S. Payusov, G. O. Kornyshov
Publikováno v:
Journal of Physics: Conference Series. 1697:012177
We present an experimental study of the optical gain of edge-emitting lasers based on a new type of quantum-sized InGaAs active medium grown on GaAs substrates, which we refer to as quantum-well-dots (QWDs). It is shown that the single layer QWD acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ec44c707f7df30665bd092220f1889
https://doi.org/10.1088/1742-6596/1697/1/012177
https://doi.org/10.1088/1742-6596/1697/1/012177
Autor:
G. O. Kornyshov, Mikhail V. Maximov, A. E. Zhukov, S. A. Mintairov, Yu. M. Shernyakov, N. Yu. Gordeev, N. A. Kalyuzhnyy, M. M. Kulagina, A. S. Payusov, A. A. Serin
Publikováno v:
Journal of Physics: Conference Series. 1410:012100
We present a study of high-power characteristics of edge-emitting lasers based on quantum well-dots (QWD) in a pulsed regime. QWD-based lasers with 2 and 5 active layers emitting at ∼1.1 μm provided maximal optical power of 39 W limited by the pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fc256599b440fa8008d8cddc38ed176
https://doi.org/10.1088/1742-6596/1410/1/012100
https://doi.org/10.1088/1742-6596/1410/1/012100
Autor:
A. A. Kharchenko, A. S. Payusov, A. E. Zhukov, N. A. Kalyuzhnyy, A. A. Serin, Mikhail V. Maximov, G. O. Kornyshov, Yu. M. Shernyakov, S. A. Mintairov, N. Yu. Gordeev
Publikováno v:
Journal of Physics: Conference Series. 1410:012118
Having investigated narrow-ridge lasers based on a single layer of InGaAs quantum well-dots emitting at the wavelength of 1.06 μm we have shown anomalous transverse multimode lasing not observed in the broad-area lasers. The effect is shown to be ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e520a8992c2837daaeb0dda6319228a
https://doi.org/10.1088/1742-6596/1410/1/012118
https://doi.org/10.1088/1742-6596/1410/1/012118
Autor:
N. A. Kalyuzhnyy, A. E. Zhukov, A. S. Payusov, N. Yu. Gordeev, G. O. Kornyshov, Mikhail V. Maximov, A. A. Serin, S. A. Mintairov, Yu. M. Shernyakov, Alexey M. Nadtochiy
Publikováno v:
Journal of Physics: Conference Series. 1400:066045
We present a study of characteristics of the edge-emitting lasers operating in the 0.98 μm wavelength range and based on a new type of InGaAs/GaAs active region – quantum well-dots (QWD). Utilizing the QWD active region in broadened 1.3 μm wavegu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc3649f8cc5e918a4f6ee8ac03a771b7
https://doi.org/10.1088/1742-6596/1400/6/066045
https://doi.org/10.1088/1742-6596/1400/6/066045
Autor:
Zhukov, A. E.1 (AUTHOR) zhukale@gmail.com, Nadtochiy, A. M.1 (AUTHOR), Kryzhanovskaya, N. V.1 (AUTHOR), Shernyakov, Yu. M.2 (AUTHOR), Gordeev, N. Yu.2 (AUTHOR), Serin, A. A.2 (AUTHOR), Mintairov, S. A.2 (AUTHOR), Kalyuzhnyy, N. A.2 (AUTHOR), Payusov, A. S.2 (AUTHOR), Kornyshov, G. O.3 (AUTHOR), Maximov, M. V.3 (AUTHOR), Wang, Y.4 (AUTHOR)
Publikováno v:
Semiconductors. Nov2023, Vol. 57 Issue 11, p513-518. 6p.