Zobrazeno 1 - 1
of 1
pro vyhledávání: '"G. O. Andreev"'
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8f8e442d94adeb4970489d610f19e39
