Zobrazeno 1 - 10
of 42
pro vyhledávání: '"G. Nuzillat"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new monolithically integrated GaAs decision circuit has been fabricated in order to satisfy speed requirements of a 840 Mbit/s coaxial cable PCM transmission system. The circuit is of SSI complexity (about 60 integrated components) and utilizes nor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ddeaa32743ed9f1e2c0128dc6d40cc
https://doi.org/10.1109/mwsym.1980.1124199
https://doi.org/10.1109/mwsym.1980.1124199
Publikováno v:
IEEE Transactions on Electron Devices. 27:1102-1109
The stringent pinchoff voltage control required by the normally-off GaAs FET logic approach appears to be a very serious limitation to its LSI capability. This paper presents the operation and performance of a more tolerant logic IC approach intented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::006d7b8f8a8c85761c53a254a570c36e
https://doi.org/10.1109/t-ed.1980.19992
https://doi.org/10.1109/t-ed.1980.19992
Publikováno v:
IEEE Transactions on Electron Devices. 29:1110-1115
An 8-bit fully decoded RAM test circuit has been designed and fabricated using enhancement-mode GaAs-MESFET's with the LPFL circuit approach. Correct operation of the circuit has been observed for a supply voltage varying from 3.5 to 7 V. An access t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6ea6e5c691746fa6198558affdcf99c
https://doi.org/10.1109/t-ed.1982.20841
https://doi.org/10.1109/t-ed.1982.20841
Publikováno v:
IEEE Transactions on Electron Devices. 27:1019-1024
The evolution of the drain saturation current of the carrier concentration and of the equipotential lines in a GaAs MESFET, were studied taking into account the existence of an interfacial barrier between the active layer and the SI substrate. A bidi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a60898ab123bc3fbdba5d430ac2c6c
https://doi.org/10.1109/t-ed.1980.19980
https://doi.org/10.1109/t-ed.1980.19980
Publikováno v:
IEEE Journal of Solid-State Circuits. 18:365-369
The realization and performance of a low-power buffered FET logic (1p-BFL) 4 bit ripple carry adder is reported. Performance measurements indicate a critical path average propagation delay of 1.9 ns at a total power dissipation of 45 mW, output buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3cf325015a36d678ca7a50980090a3
https://doi.org/10.1109/jssc.1983.1051953
https://doi.org/10.1109/jssc.1983.1051953
Autor:
G. Nuzillat, E.H. Perea, F. Damay-Kavala, M. Peltier, M. Gloanec, Tung Pham Ngu, G. Bert, C. Arnodo
Publikováno v:
IEEE Journal of Solid-State Circuits. 17:569-584
This paper gives an overview of the basic concepts used in the design and fabrication of gallium arsenide MESFET integrated circuits intended for gigabit logic applications. The present status of speed-power performances, packing densities, and integ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ae9eca9e15fc294df8e247eaafc01eb
https://doi.org/10.1109/jssc.1982.1051777
https://doi.org/10.1109/jssc.1982.1051777
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:472-478
A first generation of monolithic digital IC's using normally-on type GaAs MESFET's with 1.2-mu m gate length was initially developed. This technology leads to logic gates with propagation delays in the range 130-170 ps. It was applied to the fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b9e806aad28ff4fa83c54534aab367
https://doi.org/10.1109/tmtt.1980.1130103
https://doi.org/10.1109/tmtt.1980.1130103
Autor:
M. Ohmori, H. Kusakawa, T. Mimura, G. Nuzillat, N. Kato, T. Mizutani, M. Gloanec, F.S. Lee, T. Van Duzer, Nelson J. Ho, M. Peltier, C.F. Krumm, H.L. Grubin, Naoki Yokoyama, R.C. Eden, D.J. Herrell, P.C. Arnett, R. Zucca, M. Ino, W.R. Curtice, N.G. Alexapoulos, S.I. Long, K. Suyama, P.T. Greiling, B.E. Dobratz, M. Fukuta, B.M. Welch, M. Ida, J.A. Maupin, C. Arnodo
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:508-512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce747e334128a81d02abfffd1b6abbc4
https://doi.org/10.1109/tmtt.1980.1130109
https://doi.org/10.1109/tmtt.1980.1130109
Publikováno v:
IEEE Journal of Solid-State Circuits. 11:385-394
Using a simple channel implantation step, the choice of the threshold voltage determines speed and power. Illustrations are given by the example of a 3-input NOR-gate with 1/spl times/5-/spl mu/m/SUP 2/ channel geometry for the switching transistors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32be852acc03772c71719d8fd9c19a0a
https://doi.org/10.1109/jssc.1976.1050741
https://doi.org/10.1109/jssc.1976.1050741
Publikováno v:
Solid State Communications. 7:1123-1128
Resume On compare les resultats concernant l'evaluation des densites d'etats de surface dans les structures MOS en utilisant la methode de Berglund1 et une methode que nous avons decrite precedemment.2 On trouve, par les deux methodes et avec un bon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99aac9345aaaf762fd2f33687a460238
https://doi.org/10.1016/0038-1098(69)90498-0
https://doi.org/10.1016/0038-1098(69)90498-0