Zobrazeno 1 - 1
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pro vyhledávání: '"G. Nueckel"'
Publikováno v:
Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.
Minimizing R/sub bb/, C/sub ca/, and C/sub cb/ is crucial to maximizing the key figure of merit f/sub max/ in the SiGe HBT. Through a systematic scaling study of the extrinsic base-emitter sidewall spacer, we explore for the first time the trade-off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c57e28ccfc364ccee4119a54fae2f431
https://doi.org/10.1109/bipol.1996.553888
https://doi.org/10.1109/bipol.1996.553888
