Zobrazeno 1 - 5
of 5
pro vyhledávání: '"G. N. Pestov"'
Publikováno v:
Бюллетень сибирской медицины, Vol 10, Iss 5, Pp 66-69 (2011)
In experiments on intact rats and rats with steroid diabetes was studied the effects of prolonged introduction of 4-aminobenzoilgidrazid of succinic acid. It is shown that this substance potentiates the hypoglycemic effect of insulin, increases gluco
Externí odkaz:
https://doaj.org/article/f669052e78ac4fa18edcbe7ec3f06430
Publikováno v:
Nanobiotechnology Reports. 16:836-839
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf14fc95a4965ee9d2bb3df0e217516b
https://doi.org/10.1134/s2635167621060045
https://doi.org/10.1134/s2635167621060045
Publikováno v:
Nanotechnologies in Russia. 13:609-613
In this work, a process solution for the formation of an array of piezo- and pyroelectric structures with the use of a matrix of nanoprofiled silica is demonstrated. It is proposed to use plasma etching through a hard mask of porous anodic alumina fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1caee5ae8a06859f2f5657dedf22b53
https://doi.org/10.1134/s1995078018060034
https://doi.org/10.1134/s1995078018060034
Autor:
S. I. Raevskaya, I. P. Raevski, V. I. Shevyakov, Alexey Belov, D. N. Sandjiev, G. N. Pestov, I. L. Kislova, A. V. Solnyshkin
Publikováno v:
Thin Solid Films. 653:24-28
The frequency dependence of real (e′) and imaginary (e″) components of the complex dielectric permittivity has been determined for tin-thiohypodiphosphate Sn2P2S6 films in the temperature region from 150 to 400 K. There are two dielectric relaxat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c61236a5807fa81ff4d945869f71560
https://doi.org/10.1016/j.tsf.2018.02.039
https://doi.org/10.1016/j.tsf.2018.02.039
Publikováno v:
Journal of Physics: Conference Series. 1400:055006
In this work, we have formed CuO memristive array embedded into porous SiO2 layer. Such an approach would create synaptic system on silicon substrate using standard integrated electronics operations. It also provides control over the geometric parame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b2fc40743063176c48131494d6a410
https://doi.org/10.1088/1742-6596/1400/5/055006
https://doi.org/10.1088/1742-6596/1400/5/055006