Výsledky vyhledávání - "G. N. Mosina"

Structural state of III nitride layers implanted with erbium ions

Autor: G. N. Mosina, R. N. Kyutt, Elena I. Shek, Nikolai A. Sobolev

Publikováno v: Physics of the Solid State. 48:1672-1677

The defect structure of AlGaN/GaN superlattices and GaN layers grown through vapor-phase epitaxy from organometallic compounds is investigated using x-ray diffraction analysis before and after implantation with erbium ions at an energy of 1 MeV and a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::319325db975cbcf3a1c2a919d9367b56
https://doi.org/10.1134/s1063783406090071

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The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method

Autor: G. N. Mosina, R. N. Kyutt, M. P. Shcheglov, L. M. Sorokin

Publikováno v: Physics of the Solid State. 48:1577-1583

High-resolution x-ray diffractometry and electron microscopy are used to study the defect structure and relaxation mechanism of elastic stresses in AlGaN/GaN superlattices grown by the MOCVD method on sapphire covered with a preliminarily deposited G

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb326b788ed0497d5c45507e54e20220
https://doi.org/10.1134/s1063783406080257

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Heteropolytype structures with SiC quantum dots

Autor: G. N. Mosina, M. P. Shcheglov, V. N. Petrov, L. M. Sorokin, A. A. Lebedev, A. S. Tregubova, A. E. Cherenkov, A. N. Titkov

Publikováno v: Technical Physics Letters. 31:997-1000

Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The X-ray topography and X-ray diffraction da

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a3533622e832b01989f8070683498b5
https://doi.org/10.1134/1.2150879

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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Autor: G. N. Mosina, L. M. Sorokin, J Kearns, S S Ruvimov, R. N. Kyutt, I. L. Shulpina, M. P. Scheglov, V. V. Ratnikov, V Todt

Publikováno v: Journal of Physics D: Applied Physics. 38:A111-A116

A combination of x-ray diffraction methods and electron microscopy was used for the structural study of Czochralski silicon crystals highly doped by As. For as-grown crystals a weak strain field and probable clustering of As-impurity atoms follow fro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e872edfd7ec325cffb8c43671bbbb3b
https://doi.org/10.1088/0022-3727/38/10a/021

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Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

Autor: L. M. Sorokin, A. S. Tregubova, A. A. Lebedev, G. N. Mosina, N.S. Savkina, V. B. Shuman

Publikováno v: Technical Physics Letters. 30:950-953

We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial layer of 3C-SiC polytype (epi-3C-SiC) was gr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d584b9a2683109cc9ee408dc35b68ce6
https://doi.org/10.1134/1.1829352

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X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Autor: Jung Ho Je, Mikhail Yu. Gutkin, L. M. Sorokin, G. N. Mosina, N.S. Savkina, V.B. Shuman, Alexander A. Lebedev, Tatiana S. Argunova

Publikováno v: Materials Science Forum. :363-366

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f512388eb020730812efbf00bb738c09
https://doi.org/10.4028/www.scientific.net/msf.457-460.363

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Iron disilicide formed in a-Si〈Fe〉 thin films by magnetron co-sputtering

Autor: O. I. Kon’kov, G. N. Mosina, V. Yu. Davydov, Oleg B. Gusev, V. Kh. Kudoyarova, E. I. Terukov

Publikováno v: Physica B: Condensed Matter. :939-943

The formation of β-FeSi2 precipitates was observed for the first time in microcrystalline Si films. The Fe-doped amorphous Si films (a-Si:Fe) were obtained using magnetron sputtering. Subsequent short-time thermal treatment led to the transition of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75affd1d3a58ce22de2cb6c450c1f18c
https://doi.org/10.1016/j.physb.2003.09.200

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