Zobrazeno 1 - 3
of 3
pro vyhledávání: '"G. N. Iluridze"'
Autor:
G. N. Iluridze, Stefan Ivanov, G. V. Benemanskaya, G. E. Frank-Kamenetskaya, Dmitry Marchenko, S. N. Timoshnev
Publikováno v:
Journal of Experimental and Theoretical Physics. 118:600-610
The electronic structure of the n-GaN(0001) and Al x Ga1 − x N(0001) (x = 0.16, 0.42) surfaces and the Ba/n-GaN and Ba/AlGaN interfaces is subjected to in situ photoemission investigations in the submonolayer Ba coverage range. The photoemission sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dc2591c1d28b75a653443ba5be4c45e
https://doi.org/10.1134/s1063776114040098
https://doi.org/10.1134/s1063776114040098
Autor:
G. N. Iluridze, V. L. Berkovits, A. B. Gordeeva, Paata J. Kervalishvili, T. A. Minashvili, T. V. L’vova, Akaki Gigineishvili, V. P. Ulin
Publikováno v:
NATO Science for Peace and Security Series B: Physics and Biophysics ISBN: 9789401774666
A comparative study of the nitride and sulfide chemisorbed layers as the surface passivants are done for (100) surfaces of InAs and GaAs. A chemical model which describes formation of such layers in hydrazine-sulfide and water sodium sulfide solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf3a8f9acfb0e46764f77d8a23add79
https://doi.org/10.1007/978-94-017-7468-0_6
https://doi.org/10.1007/978-94-017-7468-0_6
Autor:
G. N. Iluridze, M. Yu. Stamateli, A. V. Gigineishvili, T. O. Dadiani, Z. U. Dzhabua, K. D. Davitadze
Publikováno v:
Physics of the Solid State. 48:1481-1485
A technique for preparing γ-Nd2S3 crystalline thin films through discrete vacuum thermal evaporation of a presynthesized bulk material is developed. The films deposited are doped with cadmium and lead. The reflectance and transmittance spectra of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c50004936021cf1e67f013e05c6e9b0
https://doi.org/10.1134/s1063783406080105
https://doi.org/10.1134/s1063783406080105